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Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection

[+] Author Affiliations
Miyako Matsui, Syuntaro Machida, Toshiyuki Mine, Kazuyuki Hozawa, Kikuo Watanabe, Yasushi Goto

Hitachi Limited, Central Research Laboratory, 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8602, Japan

Jiro Inoue, Hiroshi Nagaishi

Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-0034, Japan

J. Micro/Nanolith. MEMS MOEMS. 6(1), 013009 (February 12, 2007). doi:10.1117/1.2437195
History: Received March 28, 2006; Revised September 20, 2006; Accepted September 25, 2006; Published February 12, 2007
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We analyze the electron-irradiation damage induced in wafers by scanning electron microscope (SEM) inspection, which uses SEM images of voltage contrast formed by the charges on the pattern. The effects of electron-beam energy and charging on a metal-oxide semiconductor (MOS) capacitor are studied. We find that the higher energy electron beam, whose electron range is larger than the thickness of the gate electrode, creates traps at the interface between the silicon substrate and the gate dielectric. The flat-band voltage is shifted by the created traps. Although these traps are created by the transmission of the electron beam into the dielectric, they are not created only by charging on the gate electrode; neither is an oxide fixed charge created in the MOS capacitor. Accordingly, for damage-free inspection of MOS devices, the electron-beam energy should be low enough that the electron range is smaller than the thickness of the gate electrode. On the other hand, the flat-band voltage does not shift, owing to charging on the pattern surface during the electron irradiation. However, the gate dielectric is broken down by charging on the gate electrode at high voltage. Accordingly, for damage-free inspection, the charging voltage should be controlled so as not to break down the gate dielectric.

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© 2007 Society of Photo-Optical Instrumentation Engineers

Citation

Miyako Matsui ; Syuntaro Machida ; Toshiyuki Mine ; Kazuyuki Hozawa ; Kikuo Watanabe, et al.
"Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection", J. Micro/Nanolith. MEMS MOEMS. 6(1), 013009 (February 12, 2007). ; http://dx.doi.org/10.1117/1.2437195


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