Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection

Miyako Matsui; Syuntaro Machida; Toshiyuki Mine; Kazuyuki Hozawa; Kikuo Watanabe; Yasushi Goto; Jiro Inoue; Hiroshi Nagaishi

doi:10.1117/1.2437195

1 January 2007 Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection

Miyako Matsui, Syuntaro Machida, Toshiyuki Mine, Kazuyuki Hozawa, Kikuo Watanabe, Yasushi Goto, Jiro Inoue, Hiroshi Nagaishi

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 6, Issue 1, 013009 (January 2007). https://doi.org/10.1117/1.2437195

Abstract

We analyze the electron-irradiation damage induced in wafers by scanning electron microscope (SEM) inspection, which uses SEM images of voltage contrast formed by the charges on the pattern. The effects of electron-beam energy and charging on a metal-oxide semiconductor (MOS) capacitor are studied. We find that the higher energy electron beam, whose electron range is larger than the thickness of the gate electrode, creates traps at the interface between the silicon substrate and the gate dielectric. The flat-band voltage is shifted by the created traps. Although these traps are created by the transmission of the electron beam into the dielectric, they are not created only by charging on the gate electrode; neither is an oxide fixed charge created in the MOS capacitor. Accordingly, for damage-free inspection of MOS devices, the electron-beam energy should be low enough that the electron range is smaller than the thickness of the gate electrode. On the other hand, the flat-band voltage does not shift, owing to charging on the pattern surface during the electron irradiation. However, the gate dielectric is broken down by charging on the gate electrode at high voltage. Accordingly, for damage-free inspection, the charging voltage should be controlled so as not to break down the gate dielectric.

©(2007) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Miyako Matsui, Syuntaro Machida, Toshiyuki Mine, Kazuyuki Hozawa, Kikuo Watanabe, Yasushi Goto, Jiro Inoue, and Hiroshi Nagaishi "Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection," Journal of Micro/Nanolithography, MEMS, and MOEMS 6(1), 013009 (1 January 2007). https://doi.org/10.1117/1.2437195

Published: 1 January 2007

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $24.00

Non-members: $28.00 ADD TO CART

JOURNAL ARTICLE
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Inspection

Dielectrics

Electron beams

Electrodes

Capacitors

Annealing

Molybdenum

Show All Keywords

Keywords/Phrases

Search In:

Publication Years