Articles

Dry etching for the correction of gap-induced blurring and improved pattern resolution in nanostencil lithography

[+] Author Affiliations
Julien Arcamone

CNM-IMB (CSIC), Campus UAB, E-08193 Bellaterra, Barcelona, Spain

Ana Sánchez-Amores

CNM-IMB (CSIC), Campus UAB, E-08193 Bellaterra, Barcelona, Spain

Josep Montserrat

CNM-IMB (CSIC), Campus UAB, E-08193 Bellaterra, Barcelona, Spain

Marc A. F. van den Boogaart

Ecole Polytechnique Fédérale de Lausanne, Microsystems Laboratory, 1015 Lausanne, Switzerland

Juergen Brugger

Ecole Polytechnique Fédérale de Lausanne, Microsystems Laboratory, 1015 Lausanne, Switzerland

Francesc Pérez-Murano

CNM-IMB (CSIC), Campus UAB, E-08193 Bellaterra, Barcelona, Spain

J. Micro/Nanolith. MEMS MOEMS. 6(1), 013005 (February 23, 2007). doi:10.1117/1.2435273
History: Received July 25, 2006; Revised September 05, 2006; Accepted September 19, 2006; Published February 23, 2007
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We present nanostencil lithography as a new and parallel nanopatterning technique for batch fabrication of micro/nanoelectromechanical systems (MEMS/NEMS) with high throughput and resolution. We use nanostencil lithography for the purpose of integrating nanomechanical resonators into complementary metal-oxide semiconductor (CMOS) circuits. When patterning nonflat substrates, which is the case of CMOS wafers, the gap between the nanostencil membrane and the surface induces a pattern blurring that constitutes an intrinsic limitation to the maximum achievable resolution. In our case, the lateral blurring is on the order of 150nm on each side. We present here a remedy to this limitation that is based on a corrective dry etching step that removes the excess material and which recovers the designed pattern dimensions. As a demonstration, we succeed in the patterning of an entire 100-mm-diam wafer with nanomechanical devices having lateral dimensions in the range of 200nm.

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© 2007 Society of Photo-Optical Instrumentation Engineers

Citation

Julien Arcamone ; Ana Sánchez-Amores ; Josep Montserrat ; Marc A. F. van den Boogaart ; Juergen Brugger, et al.
"Dry etching for the correction of gap-induced blurring and improved pattern resolution in nanostencil lithography", J. Micro/Nanolith. MEMS MOEMS. 6(1), 013005 (February 23, 2007). ; http://dx.doi.org/10.1117/1.2435273


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