Articles

Simulation of mask proximity printing

[+] Author Affiliations
Bálint Meliorisz

Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nuremberg, Cauerstrasse 6, 91058, Erlangen, Germany and Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystrasse 10, 91058, Erlangen, Germany

Andreas Erdmann

Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystrasse 10, 91058, Erlangen, Germany

J. Micro/Nanolith. MEMS MOEMS. 6(2), 023006 (April 18, 2007). doi:10.1117/1.2727475
History: Received March 30, 2006; Revised November 29, 2006; Accepted January 12, 2007; Published April 18, 2007
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The paper presents a simulation approach for mask proximity printing. The simulation steps include image formation in air and in photoresist, post-exposure bake, and chemical development and analysis of resist profiles. The intensity distribution in air and in resist in proximity distance from the mask is described by a fast frequency domain method that is based on scalar diffraction analysis. The accuracy and the performance of the method are compared with rigorous electromagnetic field computations that take mask topography effects and the finite conductivity of absorber materials into account. The computed intensity distributions inside the resist are coupled to an established standard simulation flow, which is also used in the simulation of projection printing. The resulting resist profiles can be evaluated in terms of linewidth, sidewalls, and other parameters. Finally, an application of the simulation procedure for the simulation of process windows and optimization of linewidth biasing is shown.

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© 2007 Society of Photo-Optical Instrumentation Engineers

Citation

Bálint Meliorisz and Andreas Erdmann
"Simulation of mask proximity printing", J. Micro/Nanolith. MEMS MOEMS. 6(2), 023006 (April 18, 2007). ; http://dx.doi.org/10.1117/1.2727475


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