Residual birefringence in photomask substrates

Baoliang Bob Wang

doi:10.1117/1.1445429

1 April 2002 Residual birefringence in photomask substrates

Baoliang Bob Wang

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 1, Issue 1, (April 2002). https://doi.org/10.1117/1.1445429

Abstract

Residual linear birefringence is an important property for quality control of optical components used in optical lithographic instruments. This paper shows that it is especially critical to control the residual linear birefringence in the substrate of photomasks at a very low level. A birefringence measurement system, known as Exicor®, was used for measuring both the magnitude and angular orientation of residual linear retardance in photomask substrates. Different patterns and levels of residual linear birefringence in these samples were identified. The effect of residual linear birefringence in photomask substrates, in determining wafer imaging quality, is discussed.

©(2002) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Baoliang Bob Wang "Residual birefringence in photomask substrates," Journal of Micro/Nanolithography, MEMS, and MOEMS 1(1), (1 April 2002). https://doi.org/10.1117/1.1445429

Published: 1 April 2002

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