SILICON MEMS

Investigation of precision grinding process for production of silicon diaphragms

[+] Author Affiliations
A. Prochaska, S. J. N. Mitchell

Queen’s University Belfast, School of Electrical and Electronic Engineering, Belfast?BT9?5AH, United Kingdom

T. Perova, R. Maurice

University of Dublin, Trinity College, Department of Electronic and Electrical Engineering, Dublin?2, Ireland

P. T. Baine, Harold S. Gamble

Queen’s University Belfast, School of Electrical and Electronic Engineering, Belfast?BT9?5AH, United Kingdom

J. Micro/Nanolith. MEMS MOEMS. 1(2), 166-175 (Jul 01, 2002). doi:10.1117/1.1450597
History: Received Aug. 7, 2001; Revised Dec. 13, 2001; Accepted Dec. 21, 2001; Online July 19, 2002
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The application of precision grinding for the formation of a silicon diaphragm is investigated. The test structures involved 2–6 mm diam diaphragms with thicknesses in the range of 25–150 μm. When grinding is performed without supporting the diaphragm, bending occurs due to nonuniform removal of the silicon material over the diaphragm region. The magnitude of bending depends on the final thickness of the diaphragm. The results demonstrate that the use of a porous silicon support can significantly reduce the amount of bending, by a factor of up to 300 in the case of 50 μm thick diaphragms. The use of silicon on insulator (SOI) technology can also suppress or eliminate bending although this may be a less economical process. Stress measurements in the diaphragms were performed using x-ray and Raman spectroscopies. The results show stress of the order of 1×1071×108Pa in unsupported and supported by porous silicon diaphragms while SOI technology provides stress-free diaphragms. Results obtained from finite element method analysis to determine deterioration in the performance of a 6 mm diaphragm due to bending are presented. These results show a 10% reduction in performance for a 75 μm thick diaphragm with bending amplitude of 30 μm, but negligible reduction if the bending is reduced to <10 μm. © 2002 Society of Photo-Optical Instrumentation Engineers.

© 2002 Society of Photo-Optical Instrumentation Engineers

Topics

Silicon

Citation

A. Prochaska ; S. J. N. Mitchell ; T. Perova ; R. Maurice ; P. T. Baine, et al.
"Investigation of precision grinding process for production of silicon diaphragms", J. Micro/Nanolith. MEMS MOEMS. 1(2), 166-175 (Jul 01, 2002). ; http://dx.doi.org/10.1117/1.1450597


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