SPECIAL SECTION ON LITHOGRAPHY FOR SUB-100-NM DEVICE FABRICATION

Resolution enhancement of 157 nm lithography by liquid immersion

[+] Author Affiliations
M. Switkes, M. Rothschild

Massachusetts Institute of Technology, Lincoln Laboratory, 244 Wood Street, Lexington, Massachusetts?02420 E-mail: mswitkes@ll.mit.edu

J. Micro/Nanolith. MEMS MOEMS. 1(3), 225-228 (Oct 01, 2002). doi:10.1117/1.1502260
History: Received Mar. 29, 2002; Revised May 13, 2002; Accepted May 14, 2002; Online October 11, 2002
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We present the results of a preliminary feasibility study of liquid immersion lithography at 157 nm. A key enabler has been the identification of a class of commercially available liquids, perfluoropolyethers, with low 157 nm absorbance α15710cm1 base 10. With 157 nm index of refraction around 1.36, these liquids could enable lithography at numerical aperture ∼1.25 and thus resolution of 50 nm for k1=0.4. We have also performed preliminary studies on the optical, chemical, and physical suitability of these liquids for use in high throughput lithography. We also note that at longer wavelengths, there is a wider selection of transparent immersion liquids. At 193 nm, the most transparent liquid measured, de-ionized water, has α193=0.036cm1 base 10. Water immersion lithography at 193 nm would enable resolution of 60 nm with k1=0.4. © 2002 Society of Photo-Optical Instrumentation Engineers.

© 2002 Society of Photo-Optical Instrumentation Engineers

Citation

M. Switkes and M. Rothschild
"Resolution enhancement of 157 nm lithography by liquid immersion", J. Micro/Nanolith. MEMS MOEMS. 1(3), 225-228 (Oct 01, 2002). ; http://dx.doi.org/10.1117/1.1502260


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