EXTREME UV LITHOGRAPHY

Simulation model of in-plane distortion in extreme ultraviolet lithography mask during chucking without friction

[+] Author Affiliations
Akira Chiba, Eiichi Hoshino, Minoru Sugawara, Hiromasa Yamanashi, Kazuya Ota, Taro Ogawa, Shinji Okazaki

ASET EUV Laboratory, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa?243-0198, Japan

J. Micro/Nanolith. MEMS MOEMS. 2(2), 140-147 (Apr 01, 2003). doi:10.1117/1.1563645
History: Received Apr. 1, 2002; Revised Dec. 17, 2002; Accepted Jan. 6, 2003; Online April 11, 2003
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In-plane displacement (IPD) of an extreme ultraviolet lithography (EUVL) mask in a flat state during the electrostatic chucking stage without friction is examined through simulations. For predicting IPD of an EUVL mask, a simulation model based on two-dimensional plane stress theory is developed. With regard to the absorber patterns both square and rectangle, film stress and absorber coverage dependency of IPD is investigated. Mitigation of IPD to the 1-nm level is possible by reducing absorber stress to ±100MPa. The change in surface height caused by absorber film stress of ±500MPa is less than 1 nm. The influence of change in surface height on image placement shift was found to be negligible because the image placement shift is 0.03 nm. © 2003 Society of Photo-Optical Instrumentation Engineers.

© 2003 Society of Photo-Optical Instrumentation Engineers

Citation

Akira Chiba ; Eiichi Hoshino ; Minoru Sugawara ; Hiromasa Yamanashi ; Kazuya Ota, et al.
"Simulation model of in-plane distortion in extreme ultraviolet lithography mask during chucking without friction", J. Micro/Nanolith. MEMS MOEMS. 2(2), 140-147 (Apr 01, 2003). ; http://dx.doi.org/10.1117/1.1563645


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