ELECTRON PROJECTION LITHOGRAPHY

Predicting overlay performance for electron-projection-lithography masks

[+] Author Affiliations
Phillip L. Reu, Cheng-fu Chen, Roxann L. Engelstad, Edward G. Lovell

University of Wisconsin, Computational Mechanics Center, 1513 University Avenue, Madison, Wisconsin 53706 E-mail: reu@cae.wisc.edu

Michael J. Lercel

IBM Microelectronics, 1000 River Street, Essex Junction, Vermont 05452

Obert R. Wood, R. Scott Mackay

International SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 ?

J. Micro/Nanolith. MEMS MOEMS. 2(2), 148-156 (Apr 01, 2003). doi:10.1117/1.1563646
History: Received Jul. 18, 2002; Accepted Oct. 24, 2002; Online April 11, 2003
Text Size: A A A

Minimizing mask-level distortions is critical to the success of electron projection lithography (EPL) in the sub-100-nm regime. A number of possibilities exist to reduce mask-fabrication and pattern-transfer distortion including subfield correction, “dummy” patterns, pattern splitting, and film stress control. Finite element modeling was used to illustrate the advantages and capabilities of these correction schemes for a 100-mm stencil mask with 1-mm×1-mm membrane windows. Static-random-access-memory-type circuit features, including both the interconnect and contact levels, were used, to simulate realistic circuit layouts with both cross-mask and intra-membrane pattern density gradients. With such correction techniques, it is possible to reduce the EPL mask-level distortions for “worst-case” mixed pattern types to less than 1.0 nm. © 2003 Society of Photo-Optical Instrumentation Engineers.

© 2003 Society of Photo-Optical Instrumentation Engineers

Citation

Phillip L. Reu ; Cheng-fu Chen ; Roxann L. Engelstad ; Edward G. Lovell ; Michael J. Lercel, et al.
"Predicting overlay performance for electron-projection-lithography masks", J. Micro/Nanolith. MEMS MOEMS. 2(2), 148-156 (Apr 01, 2003). ; http://dx.doi.org/10.1117/1.1563646


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