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Comparison of extreme ultraviolet reflectance measurements

[+] Author Affiliations
F. Scholze, J. Tu¨mmler

Physikalisch-Technische Bundesanstalt, Abbestrasse 2-12, 10587 Berlin, Germany E-mail: frank.scholze@ptb.de

E. Gullikson, A. Aquila

Lawrence Berkeley National Laboratory, Center for X-Ray Optics, Berkeley, California 94720

J. Micro/Nanolith. MEMS MOEMS. 2(3), 233-235 (Jul 01, 2003). doi:10.1117/1.1583735
History: Received Dec. 19, 2002; Accepted Mar. 28, 2003; Online July 07, 2003
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The semiconductor industry has pushed linewidths on integrated-circuit chips down to 100 nm. To pattern ever finer lines by use of photolithography, the industry is now preparing the transition to extreme ultraviolet lithography (EUVL) at 13 nm by 2007. As EUVL matures, the requirements for the accuracy of reflectivity and wavelength measurements are becoming tighter. A high absolute accuracy and worldwide traceability of reflectance measurements are mandatory for worldwide system development. A direct comparison of EUV reflectance measurements at the Advanced Light Source (ALS) Center for X-Ray Optics (CXRO) and Physikalisch-Technische Bundesanstalt (PTB) yield perfect agreement within the mutual relative uncertainties of 0.14% for reflectance and 0.014% for wavelength. © 2003 Society of Photo-Optical Instrumentation Engineers.

© 2003 Society of Photo-Optical Instrumentation Engineers

Citation

F. Scholze ; J. Tu¨mmler ; E. Gullikson and A. Aquila
"Comparison of extreme ultraviolet reflectance measurements", J. Micro/Nanolith. MEMS MOEMS. 2(3), 233-235 (Jul 01, 2003). ; http://dx.doi.org/10.1117/1.1583735


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