SPECIAL SECTION ON SURFACE MICROMACHINING

Fabrication of high-fill-factor photonic crystal devices on silicon-on-insulator substrates

[+] Author Affiliations
Sriram Venkataraman, Janusz Murakowski, Thomas N. Adam, James Kolodzey, Dennis W. Prather

The University of Delaware, Department of Electrical and Computer Engineering, 140 Evans Hall, Newark, Delaware?19716 E-mail: sriram@udel.edu

J. Micro/Nanolith. MEMS MOEMS. 2(4), 248-254 (Oct 01, 2003). doi:10.1117/1.1610477
History: Received Oct. 1, 2002; Revised Apr. 22, 2003; Accepted Jul. 8, 2003; Online October 03, 2003
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Optimization of the photonic bandgap in finite-height photonic crystal (PhC) slab structures requires high-fill-factor lattices. We present a method for fabrication of high-fill-factor PhC devices in silicon-on-insulator (SOI) substrates using electron-beam lithography and high-aspect-ratio reactive-ion etching (RIE). We achieve 8:1 aspect-ratio PhC structures with 60-nm vertical membrane walls using a custom deep reactive-ion etching process in a conventional low-end RIE with patterned resist as the only etch mask. We present examples of various PhC devices fabricated using this method including a high-efficiency coupling structure for PhC waveguides. © 2003 Society of Photo-Optical Instrumentation Engineers.

© 2003 Society of Photo-Optical Instrumentation Engineers

Citation

Sriram Venkataraman ; Janusz Murakowski ; Thomas N. Adam ; James Kolodzey and Dennis W. Prather
"Fabrication of high-fill-factor photonic crystal devices on silicon-on-insulator substrates", J. Micro/Nanolith. MEMS MOEMS. 2(4), 248-254 (Oct 01, 2003). ; http://dx.doi.org/10.1117/1.1610477


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