Special Section on Immersion Lithography

Simulation of the 45-nm half-pitch node with 193-nm immersion lithography—imaging interferometric lithography and dipole illumination

[+] Author Affiliations
Abani Biswas, Steven R. J. Brueck

University of New Mexico, Center for High Technology Materials, Albuquerque, New Mexico 87106 E-mail: abiswas@chtm.unm.edu

J. Micro/Nanolith. MEMS MOEMS. 3(1), 35-43 (Jan 01, 2004). doi:10.1117/1.1631007
History: Received May 27, 2003; Revised Jul. 23, 2003; Accepted Aug. 21, 2003; Online February 17, 2004
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With immersion in water (n=1.44), the highest spatial frequency available with ArF-based (193-nm) lithography tools with a numerical aperture (NA)=n×sinθ of 1.3 (1.44×0.9) corresponds to a half-pitch of 37 nm. This suggests that the 45-nm half-pitch node should be accessible. A detailed vector simulation study is reported for two approaches to printing for this node. Both imaging interferometric lithography (IIL, with a single mask and multiple exposures incorporating pupil plane filters) and dipole illumination (with two masks separating the x and y oriented small features) are shown to be capable of printing arbitrary structures under these conditions. There is a substantial loss of contrast for TM polarization at this NA that demands that different polarizations be used to capture the high spatial frequencies in the x and y directions. Both dipole and IIL schemes offer this capability; IIL provides more robust imaging results. © 2004 Society of Photo-Optical Instrumentation Engineers.

© 2004 Society of Photo-Optical Instrumentation Engineers

Citation

Abani Biswas and Steven R. J. Brueck
"Simulation of the 45-nm half-pitch node with 193-nm immersion lithography—imaging interferometric lithography and dipole illumination", J. Micro/Nanolith. MEMS MOEMS. 3(1), 35-43 (Jan 01, 2004). ; http://dx.doi.org/10.1117/1.1631007


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