Special Section on Mask Technology for Optical Lithography

Global critical dimension uniformity improvement for mask fabrication with negative-tone chemically amplified resists by zone-controlled postexposure bake

[+] Author Affiliations
Lothar Berger, Peter Dress, Thomas Gairing

STEAG HamaTech AG, Advanced Process Equipment Division, Ferdinand-von-Steinbeis-Ring 10, D-75447?Sternenfels, Germany E-mail: lothar.berger@steag-hamatech.com

Chia-Jen (Alex) Chen, Ren-Guey Hsieh, Hsin-Chang (Vincent) Lee, Hung-Chang Hsieh

Taiwan Semiconductor Manufacturing Company, Advanced Mask Technology Department, Micropatterning Technology Division, Number 25, Li-Hsin Road, Hsin-Chu, 300-77, Taiwan

J. Micro/Nanolith. MEMS MOEMS. 3(2), 203-211 (Apr 01, 2004). doi:10.1117/1.1683338
History: Received Jul. 28, 2003; Revised Nov. 12, 2003; Accepted Dec. 12, 2003; Online March 31, 2004
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The multizone hotplate approach of the APB5500 bake system achieves temperature uniformity significantly superior to conventional bake tools, resulting in unmatched global critical dimension (CD) uniformity from the postexposure bake (PEB) process. Progress toward 65-nm next-generation lithography, however, requires the application of negative-tone chemically amplified resists (nCARs) like NEB22. This nCAR is characterized to show a strong sensitivity to postexposure delay (PED) in vacuum during electron-beam writing of 0.5 nm/h, and also a strong PEB sensitivity of 7.8nm/°C, both resulting in systematic CD errors. These CD errors are compensated with the APB5500 bake system during PEB by automatically applying an appropriate nonuniform temperature profile. This temperature profile is calculated by an algorithm considering the resist and mask heat transfer properties. A CD uniformity improvement from 8.9 to 6.7 nm total range (25%) on a state of the art production mask is achieved. © 2004 Society of Photo-Optical Instrumentation Engineers.

© 2004 Society of Photo-Optical Instrumentation Engineers

Citation

Lothar Berger ; Peter Dress ; Thomas Gairing ; Chia-Jen (Alex) Chen ; Ren-Guey Hsieh, et al.
"Global critical dimension uniformity improvement for mask fabrication with negative-tone chemically amplified resists by zone-controlled postexposure bake", J. Micro/Nanolith. MEMS MOEMS. 3(2), 203-211 (Apr 01, 2004). ; http://dx.doi.org/10.1117/1.1683338


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