Special Section on Mask Technology for Optical Lithography

Comparisons of 9% versus 6% transmission attenuated phase shift mask for the 65 nm device node

[+] Author Affiliations
Patrick K. Montgomery, Lloyd C. Litt, Will Conley

Motorola Incorporated, Advanced Products Research and Development Laboratory, 3501 Ed Bluestein Boulevard, Austin, Texas 78721 E-mail: patrick.montgomery@motorola.com

Kevin Lucas

ST/Philips/Motorola Alliance, Crolles, France

Johannes Van Wingerden

Philips Research Laboratories, Lithography Division, Kapeldreef 75, B-3001 Leuven, Belgium

Geert Vandenberghe, Vincent Wiaux

IMEC, Silicon Process Technology Division, Kapeldreef 75, B-3001 Leuven, Belgium

J. Micro/Nanolith. MEMS MOEMS. 3(2), 276-283 (Apr 01, 2004). doi:10.1117/1.1669524
History: Received Aug. 4, 2003; Revised Dec. 17, 2003; Accepted Jan. 8, 2004; Online March 31, 2004
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The minimum gate pitch for the 65 nm device node will push 193 nm lithography toward k10.35 with numerical aperture (NA)=0.85. Previous work has analyzed the challenges expected for this generation. However, in the simplest terms, optical lithography for the 65 nm node will be difficult. Lithographers are, therefore, looking into high-transmission attenuated phase shift masks (high-T attPSMs), where T>14%, to improve process margins. The benefits of a high-T attPSM are substantial, but drawbacks like difficulty in inspection, defect free blank manufacture, and sidelobe printing may make the use of such masks impractical. One possible solution to this problem is to employ medium transmission (med-T) attPSM, such as T=9%, to image critical levels of the 65 nm node with 193 nm lithography. Earlier work has shown that the problems high-T attPSMs face are manageable for med-T attPSM. Sidelobe printing in particular will be treated in this work with simulation and experiment. A primary goal of this effort is to determine if the lithographic benefit of moving from industry-standard 6% attPSM to 9% attPSM is worth the risks associated with such a transition. This goal will be met through a direct comparison of experimental 0.75 NA 193 nm wavelength results for 6% versus 9% attPSM on the gate, contact/via, and metal layers at 65 nm generation target dimensions with leading edge resists. © 2004 Society of Photo-Optical Instrumentation Engineers.

© 2004 Society of Photo-Optical Instrumentation Engineers

Citation

Patrick K. Montgomery ; Lloyd C. Litt ; Will Conley ; Kevin Lucas ; Johannes Van Wingerden, et al.
"Comparisons of 9% versus 6% transmission attenuated phase shift mask for the 65 nm device node", J. Micro/Nanolith. MEMS MOEMS. 3(2), 276-283 (Apr 01, 2004). ; http://dx.doi.org/10.1117/1.1669524


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