Resist Imaging and Processing

Stereolithographic patterning of diazonaphthoquinone/novolac photoresist

[+] Author Affiliations
T. M. Bloomstein, S. T. Palmacci, R. R. Kunz, M. Rothschild

Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts?02420

J. Micro/Nanolith. MEMS MOEMS. 3(2), 339-347 (Apr 01, 2004). doi:10.1117/1.1668270
History: Received Nov. 27, 2002; Revised Jun. 23, 2003; Accepted Aug. 1, 2003; Online March 31, 2004
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A fabrication process has been developed which prevents solvent intermixing between layers of diazonaphthoquinone/novolac (DNQ/novolac) based resist. The process enables three-dimensional structures to be batch fabricated stereolithographically using integrated circuit-compatible resist, coating, and exposure techniques, followed by a single development step. To prevent solvent intermixing, a combination of solvent tailoring and surface treatment is employed. The photoresist is first constituted into a weaker, less polar solvent. Before coating a new layer, the surface is exposed to ozone, thus increasing the hydrophilicity of the surface and providing a less soluble barrier layer. This enables the formation of a stack of successively photoimaged layers of the same material, which are then developed in a single step. A new interlayer dose modulation technique to optimize the development process in positive tone resists such as DNQ/novolac is also described. © 2004 Society of Photo-Optical Instrumentation Engineers.

© 2004 Society of Photo-Optical Instrumentation Engineers

Citation

T. M. Bloomstein ; S. T. Palmacci ; R. R. Kunz and M. Rothschild
"Stereolithographic patterning of diazonaphthoquinone/novolac photoresist", J. Micro/Nanolith. MEMS MOEMS. 3(2), 339-347 (Apr 01, 2004). ; http://dx.doi.org/10.1117/1.1668270


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