Resist Processes

Low-voltage electron beam lithography resist processes: top surface imaging and hydrogen silisesquioxane bilayer

[+] Author Affiliations
Andrew Jamieson, C. Grant Willson

University of Texas, Department of Chemical Engineering, Austin, Texas?78712 E-mail: andrewj@che.utexas.edu

Yautzong Hsu, Alan D. Brodie

Etec Systems, Incorporated, 26460 Corporate Avenue, Hayward, California?94545

J. Micro/Nanolith. MEMS MOEMS. 3(3), 442-449 (Jul 01, 2004). doi:10.1117/1.1758268
History: Received Jun. 16, 2003; Revised Oct. 9, 2003; Accepted Oct. 10, 2003; Online July 19, 2004
Text Size: A A A

A hydrogen silisesquioxane (HSQ) bilayer process and a top surface imaging (TSI) process are investigated for application as low-voltage electron beam resist systems. Namatsu, van Delft, and others have reported printing exceptionally small features using high-voltage electron beam exposure of HSQ at high-exposure doses (2000μC/cm2 at 100 kV). The shallow penetration depth of low-voltage electrons results in greatly reduced dose requirements, and smooth, high-resolution images are generated at 1 kV with an exposure dose of less than 60μC/cm2. HSQ’s high silicon content enable it to be used in a bilayer form utilizing reactive ion etching with an oxygen plasma, thus generating high aspect ratio images. TSI has been studied in the past by numerous researchers at low voltages using various TSI schemes. We investigate the use of a chemically amplified TSI resist process based on poly (t-BOC-hydroxystyrene). The effect of base quencher loading in the resist formulation on line edge roughness and resolution is investigated, and is found to have a dramatic influence. High-resolution, high aspect ratio images are printed down to 40 nm, and exhibit only moderate levels of line edge roughness. Furthermore, proximity effects at 1, 2, and 3 kV are examined and compared to simulation. © 2004 Society of Photo-Optical Instrumentation Engineers.

© 2004 Society of Photo-Optical Instrumentation Engineers

Citation

Andrew Jamieson ; C. Grant Willson ; Yautzong Hsu and Alan D. Brodie
"Low-voltage electron beam lithography resist processes: top surface imaging and hydrogen silisesquioxane bilayer", J. Micro/Nanolith. MEMS MOEMS. 3(3), 442-449 (Jul 01, 2004). ; http://dx.doi.org/10.1117/1.1758268


Tables

Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.