Articles

Overbake and resist formulation: improved depth of focus and small line printing

[+] Author Affiliations
D. Van Steenwinckel

Philips Research Leuven, Kapeldreef 75, 3001 Leuven, Belgium E-mail: david.van.steenwinckel@philips.com

M. Shimizu

JSR Micro, Technologielaan 8, 3001 Leuven, Belgium

J. H. Lammers

Philips Research Leuven, Kapeldreef 75, 3001 Leuven, Belgium

J. Micro/Nanolith. MEMS MOEMS. 4(1), 013005 (Mar. 1, 2005). doi:10.1117/1.1858491
History: Received May 24, 2004; Revised Aug. 3, 2004; Accepted Aug. 3, 2004; Mar. 1, 2005; Online March 01, 2005
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We previously [Van Steenwinckel and Lammers, Proc. SPIE5039, 225–239 (2003)] showed that resist effects induced by “overbaking” (enhanced processing) can lead to major improvements in depth of focus and small-line printing capability through improved acid dose contrasts and a balanced optimization of acid diffusion in the presence of quencher. We show how a similar optimization can be attained by changes in resist formulation and how these changes can have a comparable positive impact on ultimate resolution and depth of focus. The formulation changes that are discussed follow the guidelines of the compact resist model that accounts for the overbake performance. The impact of the proposed resist reformulation on line-end shortening, line-edge roughness, and post exposure bake (PEB) sensitivity is discussed as well. The outcome of this work can be used to define which changes to the resist formulation offer the most beneficial improvements in the overall lithography process for printing resist features of 65 nm and smaller using ArF lithography and binary masks. © 2005 Society of Photo-Optical Instrumentation Engineers.

© 2005 Society of Photo-Optical Instrumentation Engineers

Citation

D. Van Steenwinckel ; M. Shimizu and J. H. Lammers
"Overbake and resist formulation: improved depth of focus and small line printing", J. Micro/Nanolith. MEMS MOEMS. 4(1), 013005 (Mar. 1, 2005). ; http://dx.doi.org/10.1117/1.1858491


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