Special Section on Polarization and Hyper-NA Lithography

Polarization effects in immersion lithography

[+] Author Affiliations
Konstantinos Adam

Mentor Graphics Corporation, 1001 Ridder Park Drive, San Jose, California 95131

Wilhelm Maurer

Infineon Technologies AG, St.-Martin-Str. 53, 81669 München, Germany

J. Micro/Nanolith. MEMS MOEMS. 4(3), 031106 (August 22, 2005). doi:10.1117/1.2038687
History: Received December 23, 2004; Revised May 12, 2005; Accepted May 23, 2005; Published August 22, 2005
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Optical proximity correction (OPC) tools are already equipped with the most advanced models for image formation and are capable of thin-film modeling, vector diffraction modeling, and polarization modeling. Accurate simulation of immersion lithography, even in the context of OPC, does not pose any particular difficulty. We use the optical simulator of a commercial OPC software to study source polarization and its impact in process latitude and in proximity and linearity curves. More than a 10-nm difference in both curves is observed versus source polarization at an immersion numerical aperture (NA)>1, projected to print the 45-nm node. Simulation of large and arbitrary layout snippets confirms these results and demonstrates the feasibility of using advanced models in the context of OPC. Also, dry and water-immersion lithography are compared at the same NA<1 and the main differences in imaging are highlighted. The depth-of-focus (DOF) increase in immersion is confirmed in both the ambient medium and the available DOF in resist. The DOF simulation results correlate closely with recent experimental work from other researchers.

© 2005 Society of Photo-Optical Instrumentation Engineers

Citation

Konstantinos Adam and Wilhelm Maurer
"Polarization effects in immersion lithography", J. Micro/Nanolith. MEMS MOEMS. 4(3), 031106 (August 22, 2005). ; http://dx.doi.org/10.1117/1.2038687


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