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Design and fabrication of a miniaturized bulk acoustic filter by high aspect ratio etching

[+] Author Affiliations
Chung-Hsien Lin

National Tsing Hua University, Power Mechanical Engineering Department, Hsinchu, Taiwan

Hong-Ren Chen

Asia Pacific Microsystems, Incorporated, Hsinchu, Taiwan

Weileun Fang

National Tsing Hua University, Power Mechanical Engineering Department, Hsinchu, Taiwan

J. Micro/Nanolith. MEMS MOEMS. 4(3), 033010 (August 30, 2005). doi:10.1117/1.2037387
History: Received December 10, 2004; Revised February 02, 2005; Accepted February 08, 2005; Published August 30, 2005
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A 2.45-GHz filter is fabricated by thin film bulk acoustic wave resonator (FBAR) technology. It is designed to minimize die size and simplify the fabrication process simultaneously by using inductive coupling plasma etching. The quality factor of a fabricated single resonator is 1567 and the electromechanical coupling coefficient is 5.7%. The fabricated filter has minimum insertion loss around 1.5 dB and maximum insertion loss at 3.6 dB in 83.5-MHz bandwidth, which is suitable for WLAN and Bluetooth applications.

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© 2005 Society of Photo-Optical Instrumentation Engineers

Citation

Chung-Hsien Lin ; Hong-Ren Chen and Weileun Fang
"Design and fabrication of a miniaturized bulk acoustic filter by high aspect ratio etching", J. Micro/Nanolith. MEMS MOEMS. 4(3), 033010 (August 30, 2005). ; http://dx.doi.org/10.1117/1.2037387


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