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Thin-film optimization strategy in high numerical aperture optical lithography, part 1: principles

[+] Author Affiliations
Shinn-Sheng Yu, Burn J. Lin, Anthony Yen, Chih-Ming Ke, Jacky Huang, Bang-Ching Ho, Chun-Kuang Chen, Tsai-Sheng Gau, Hong-Chang Hsieh, Yao-Ching Ku

Taiwan Semiconductor Manufacturing Company, Limited, Number 8, Li-Hsin Road 6, Hsinchu Science Park, Hsinchu, Taiwan 300-77

J. Micro/Nanolith. MEMS MOEMS. 4(4), 043003 (December 06, 2005). doi:10.1117/1.2137967
History: Received November 15, 2004; Revised May 08, 2005; Accepted May 10, 2005; Published December 06, 2005
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The functional dependence of a resist critical dimension (CD) with respect to resist thickness for a general absorptive thin-film stack in the case of oblique incidence is derived analytically with the rigorous electromagnetic theory. Based on obtained results, we discuss those thin-film effects related to CD control, such as the swing effect, bulk effect, etc., especially in the regime of high numerical aperture optical lithography.

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© 2005 Society of Photo-Optical Instrumentation Engineers

Citation

Shinn-Sheng Yu ; Burn J. Lin ; Anthony Yen ; Chih-Ming Ke ; Jacky Huang, et al.
"Thin-film optimization strategy in high numerical aperture optical lithography, part 1: principles", J. Micro/Nanolith. MEMS MOEMS. 4(4), 043003 (December 06, 2005). ; http://dx.doi.org/10.1117/1.2137967


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