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Surface roughness investigation of 157- and 193-nm polymer platforms using different etch conditions

[+] Author Affiliations
Christoph Hohle

Infineon Technologies AG, Paul-Gossen-Str.100, D-91052 Erlangen, Germany

Nicole Heckmann

Infineon Technologies AG, Paul-Gossen-Str.100, D-91052 Erlangen, Germany

Michael Sebald

Infineon Technologies AG, Paul-Gossen-Str.100, D-91052 Erlangen, Germany

Matthias Markert

Infineon Technologies SC300 GmbH & Co. OHG, Koenigsbruecker Str. 180, D-01099 Dresden, Germany

Nickolay Stepanenko

Infineon Technologies SC300 GmbH & Co. OHG, Koenigsbruecker Str. 180, D-01099 Dresden, Germany

Francis Houlihan

AZ Electronic Materials Corporation USA, 70 Meister Avenue, Somerville, New Jersey 08876

Andrew Romano, Raj Sakamuri, David Rentkiewicz

AZ Electronic Materials Corporation USA, 70 Meister Avenue, Somerville, New Jersey 08876

Ralph R. Dammel

AZ Electronic Materials Corporation USA, 70 Meister Avenue, Somerville, New Jersey 08876

J. Micro/Nanolith. MEMS MOEMS. 4(4), 043009 (December 06, 2005). doi:10.1117/1.2131101
History: Received February 03, 2005; Revised June 13, 2005; Accepted July 14, 2005; Published December 06, 2005
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A series of different fluorinated polymer platforms used for early and current 157-nm photoresists is investigated with regard to blanket etch properties and surface roughness. Besides methacrylic-based polymers applied for 193-nm lithography, fluorine containing norbornene homopolymers, fluorinated cycloolefines, and tetrafluoroethylene (TFE) norbornene copolymers are chosen. Etch rates in different plasmas used for several applications, such as poly, SiN mask open, and selective/nonselective SiO2 etch, are determined and compared to standard 193-nm platforms currently used for DRAM manufacturing. Looking at various base resins, significant differences can be found using HBr- or Cl2-based poly etch conditions and various fluorocarbon-based oxide etch chemistries. Up to 2.4 times higher etch rates in Cl2 and the different CxFy oxide etch recipes are observed for the highly fluorinated cycloolefines and the TFE norbornenes, showing a strong correlation between fluorine content and etch rate. After stress by different etch conditions, the polymer surfaces are characterized using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Surprisingly, the surface roughness of the methacrylic platforms and the norbornene base resin (determined by AFM) are found to be substantially higher than that of the highly fluorinated platforms. These results can directly be correlated to pictures obtained by optical methods (SEM).

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© 2005 Society of Photo-Optical Instrumentation Engineers

Citation

Christoph Hohle ; Nicole Heckmann ; Michael Sebald ; Matthias Markert ; Nickolay Stepanenko, et al.
"Surface roughness investigation of 157- and 193-nm polymer platforms using different etch conditions", J. Micro/Nanolith. MEMS MOEMS. 4(4), 043009 (December 06, 2005). ; http://dx.doi.org/10.1117/1.2131101


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