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Evaluation of the multistep generated wafer alignment mark to overcome chemical mechanical polishing problems

[+] Author Affiliations
Sang-Man Bae

Hynix Semiconductor Inc., Memory R&D Division, Ichon-si, Kyoungki-do, 467–701, South Korea

Moon-Hee Lee

University of Suwon, Department of Electronic Materials, Suwon P.O. Box 77, South Korea

J. Micro/Nanolith. MEMS MOEMS. 5(1), 013006 (February 01, 2006). doi:10.1117/1.2168461
History: Received December 01, 2004; Revised September 02, 2005; Accepted October 19, 2005; Published February 01, 2006
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We develop a new method to improve alignment accuracy. Specially designed two-step wafer alignment marks are evaluated for laser scan alignment to enhance wafer alignment. Wafer alignment accuracy data shows that it is enough to execute wafer alignment without failures in spite of the coarse chemical mechanical polishing (CMP) process. Effective detection of a wafer alignment mark leads to enhancement of product quality and could reduce the process time of the lithography step. It is a useful technique for thick metalization films and the planarity of high topography. A coarse metrology wafer with a CMP process can degrade the wafer alignment process. We try deep trench profiles and the clear structures of modified marks using additional photomask processing.

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© 2006 Society of Photo-Optical Instrumentation Engineers

Citation

Sang-Man Bae and Moon-Hee Lee
"Evaluation of the multistep generated wafer alignment mark to overcome chemical mechanical polishing problems", J. Micro/Nanolith. MEMS MOEMS. 5(1), 013006 (February 01, 2006). ; http://dx.doi.org/10.1117/1.2168461


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