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Progress in the fabrication of low-defect density mask blanks for extreme ultraviolet lithography

[+] Author Affiliations
Rajul V. Randive

Veeco Instruments, Inc., Plainview, New York 11803

Andy Ma

SEMATECH, Albany, New York 12203

Patrick A. Kearney

SEMATECH, Albany, New York 12203

David Krick

SEMATECH, Albany, New York 12203

Ira Reiss

Veeco Instruments, Inc., Plainview, New York 11803

Paul B. Mirkarimi

Mirkarimi Enterprises, Sunol, California 94586

Eberhard Spiller

Spiller X-ray Optics, Livermore, California 94550

J. Micro/Nanolith. MEMS MOEMS. 5(2), 023003 (May 24, 2006). doi:10.1117/1.2198853
History: Received October 14, 2005; Revised December 21, 2005; Accepted December 29, 2005; Published May 24, 2006
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Extreme ultraviolet lithography (EUVL) is the leading next-generation lithography (NGL) technology to succeed optical lithography at the 32-nm node and beyond. The technology uses a multilayer-based reflective optical system, and the development of suitable, defect-free mask blanks is the greatest challenge facing the commercialization of EUVL. We describe recent progress toward the development of a commercial tool and process for the production of EUVL mask blanks. Using the resources at Mask Blank Development Center at SEMATECH-North in Albany, New York, we are able to decrease the mean multilayer-coating-added defect density on 6-in. square quartz substrates by almost an order of magnitude, from 0.5defectscm2to0.055defectscm2 for particles 80nm in size (polystyrene latex equivalent). We also obtain a “champion” mask blank with an added defect density of only 0.005defectscm2. This advance is due primarily to a compositional analysis of the particles using focused ion beam and energy dispersive analysis of x-rays (EDX) followed by tool and procedural upgrades based on best engineering practices and judgment. Another important specification for masks blanks is the coating uniformity, and we have simultaneously achieved a centroid wavelength uniformity of 0.4% and a coating-added defect density of 0.06defcm2.

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© 2006 Society of Photo-Optical Instrumentation Engineers

Citation

Rajul V. Randive ; Andy Ma ; Patrick A. Kearney ; David Krick ; Ira Reiss, et al.
"Progress in the fabrication of low-defect density mask blanks for extreme ultraviolet lithography", J. Micro/Nanolith. MEMS MOEMS. 5(2), 023003 (May 24, 2006). ; http://dx.doi.org/10.1117/1.2198853


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