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Thickness of silicon-nitride antireflective coating on a silicon waveguide measured by an integrated micromechanical gauge

[+] Author Affiliations
Michael M. Tilleman, Dan Haronian, David Abraham

GalayOr, Incorporated, 1 Yodfat Street, P.O.Box 1351, Lod 71100, Israel

J. Micro/Nanolith. MEMS MOEMS. 5(2), 023011 (May 10, 2006). doi:10.1117/1.2198815
History: Received August 04, 2004; Revised June 28, 2005; Accepted January 26, 2006; Published May 10, 2006
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Antireflective (AR) coating on waveguides with high refractive index is imperative to minimize insertion losses. In fabricating silicon, rectangular, suspended waveguides on silicon-on-insulator (SOI) wafers, a single Si3N4 layer is deposited on the waveguide walls. For the purpose of applying an optimum layer, we develop an integrated micromechanical gauge to determine the coating width by measuring the induced stress in the silicon. Gauges at different sites on a wafer produce results with a standard deviation of about 0.5%. The insertion loss due to the waveguides is measured directly by coupling a laser beam at 1550nm from a single-mode fiber to the waveguide, then to another fiber and a detector. Tests are run on six wafers and two types of devices: a waveguide with two facets and a waveguide with a gap, presenting four facets. The optimal silicon-nitride thickness is found at 200nm, featuring a fiber-waveguide-fiber insertion loss of about 1dB for a two-facet device and 1.7dB for a four-facet device.

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© 2006 Society of Photo-Optical Instrumentation Engineers

Citation

Michael M. Tilleman ; Dan Haronian and David Abraham
"Thickness of silicon-nitride antireflective coating on a silicon waveguide measured by an integrated micromechanical gauge", J. Micro/Nanolith. MEMS MOEMS. 5(2), 023011 (May 10, 2006). ; http://dx.doi.org/10.1117/1.2198815


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