Articles

Spectral analysis of line width roughness and its application to immersion lithography

[+] Author Affiliations
Gian Francesco Lorusso

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Peter Leunissen

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Monique Ercken

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Christie Delvaux

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Frieda Van Roey

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Nadia Vandenbroeck

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Hedong Yang

KLA-Tencor, 160 Rio Robles, San Jose, California 95134

Amir Azordegan

KLA-Tencor, 160 Rio Robles, San Jose, California 95134

Tony DiBiase

KLA-Tencor, 160 Rio Robles, San Jose, California 95134

J. Micro/Nanolith. MEMS MOEMS. 5(3), 033003 (August 16, 2006). doi:10.1117/1.2242982
History: Received July 13, 2005; Revised March 13, 2006; Accepted April 19, 2006; Published August 16, 2006
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Various approaches can be used to quantify line width roughness (LWR). One of the most commonly used estimators of LWR is standard deviation σ. However, a substantial amount of information is ignored if only σ is measured. We use an automated approach to investigate LWR, where standard deviation, correlation length, and power spectrum are measured online on critical dimension scanning electron microscopes. This methodology is used to monitor LWR, investigate the effect of LWR on critical dimension precision, and to benchmark new resists for immersion lithography. Our results indicate that online LWR metrology is a critical tool in a variety of applications, including but not restricted to process control.

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© 2006 Society of Photo-Optical Instrumentation Engineers

Citation

Gian Francesco Lorusso ; Peter Leunissen ; Monique Ercken ; Christie Delvaux ; Frieda Van Roey, et al.
"Spectral analysis of line width roughness and its application to immersion lithography", J. Micro/Nanolith. MEMS MOEMS. 5(3), 033003 (August 16, 2006). ; http://dx.doi.org/10.1117/1.2242982


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