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Sober view on extreme ultraviolet lithography

[+] Author Affiliations
Burn J. Lin

TSMC, Ltd., 8 Li-Hsin Rd, 6, Hsinchu Science Park, Hsinchu, Taiwan 300-77

J. Micro/Nanolith. MEMS MOEMS. 5(3), 033005 (October 06, 2006). doi:10.1117/1.2358112
History: Received December 30, 2005; Revised June 10, 2006; Accepted June 19, 2006; Published October 06, 2006
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EUV lithography has been widely regarded as the lithography technology to succeed optical lithography since the 100-nm era. With the ending of 193-nm immersion lithography in sight, the need for a successor cannot be more urgent. We deal quantitatively with various critical aspects of EUV lithography such as source and power requirement, mask specification, random phase shifting, oblique incidence, reflective projection optics, and resist, to compile a list of the critical issues and to determine the most critical ones to make the technology a success.

© 2006 Society of Photo-Optical Instrumentation Engineers

Citation

Burn J. Lin
"Sober view on extreme ultraviolet lithography", J. Micro/Nanolith. MEMS MOEMS. 5(3), 033005 (October 06, 2006). ; http://dx.doi.org/10.1117/1.2358112


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