Articles

Sampling plan optimization for critical dimension metrology

[+] Author Affiliations
Masafumi Asano

Toshiba Corporation, Semiconductor Company, Process & Manufacturing Engineering Center, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

Takahiro Ikeda

Toshiba Corporation, Semiconductor Company, Process & Manufacturing Engineering Center, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

J. Micro/Nanolith. MEMS MOEMS. 5(3), 033008 (August 16, 2006). doi:10.1117/1.2242815
History: Received April 18, 2005; Revised October 19, 2005; Accepted February 02, 2006; Published August 16, 2006
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To enhance the quality of Advanced Process Control (APC), the optimization of the sampling plan in critical dimension (CD) metrology is studied through empirical considerations concerning the characteristics of errors and a statistical approach. The metric of the optimization is the accuracy of lot mean estimation. Critical dimension errors are classified into static and dynamic errors. A static error is defined as an error that repeats through lots while keeping its tendency, and a dynamic error as an error whose tendency changes by lot. In the basic concept of our sampling plan, sampling positions and size are determined from the static error and dynamic error, respectively. The balance of the sampling number of the wafer, field, and site under the restriction of total sampling size is optimized by a statistical theory.

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© 2006 Society of Photo-Optical Instrumentation Engineers

Citation

Masafumi Asano and Takahiro Ikeda
"Sampling plan optimization for critical dimension metrology", J. Micro/Nanolith. MEMS MOEMS. 5(3), 033008 (August 16, 2006). ; http://dx.doi.org/10.1117/1.2242815


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