Articles

Impact of polarization on an attenuated phase shift mask with ArF hyper-numerical aperture lithography

[+] Author Affiliations
Takashi Sato

Toshiba Corporation, Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, Japan

Ayako Endo

Toshiba Corporation, Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, Japan

Akiko Mimotogi

Toshiba Corporation, Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, Japan

Shoji Mimotogi

Toshiba Corporation, Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, Japan

Kazuya Sato

Toshiba Corporation, Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, Japan

Satoshi Tanaka

Toshiba Corporation, Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama, Kanagawa 235-8522, Japan

J. Micro/Nanolith. MEMS MOEMS. 5(4), 043001 (November 17, 2006). doi:10.1117/1.2397065
History: Received June 28, 2005; Revised April 15, 2006; Accepted July 26, 2006; Published November 17, 2006
Text Size: A A A

In recent low-k1 lithography, the size of a mask pattern is becoming close to the wavelength of the light source. In a sub-100nm pattern at wafer scale of 4× masks, transverse electric (TE) polarization light had higher transmittance of the zeroth order than TM polarization for a Cr mask according to rigorous model simulation of a finite difference time domain method. On the other hand, transverse magnetic (TM) polarization light had higher transmittance than TE polarization light for a MoSi mask. From the results of lithography simulation for a 45nm pattern on the MoSi mask, TE polarization was better for wide exposure latitude, but TM polarization was better for large depth of field. The performance of a current MoSi mask is inferior to that of a Cr mask. However, a lower transmittance MoSi mask has better performance in the exposure defocus window under the dipole illumination. Also, rigorous simulation showed transmittance dependency of the light incident angle to the MoSi mask. The dependency was larger for TM polarization than for TE polarization.

Figures in this Article
© 2006 Society of Photo-Optical Instrumentation Engineers

Citation

Takashi Sato ; Ayako Endo ; Akiko Mimotogi ; Shoji Mimotogi ; Kazuya Sato, et al.
"Impact of polarization on an attenuated phase shift mask with ArF hyper-numerical aperture lithography", J. Micro/Nanolith. MEMS MOEMS. 5(4), 043001 (November 17, 2006). ; http://dx.doi.org/10.1117/1.2397065


Tables

Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

PubMed Articles
Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.