Articles

Influence of resist blur on ultimate resolution of ArF immersion lithography

[+] Author Affiliations
Tokuyuki Honda

Canon Inc., 23-10 Kiyohara-Kogyodanchi, Utsunomiya-shi, Tochigi 321-3298, Japan

Yasuhiro Kishikawa

Canon Inc., 23-10 Kiyohara-Kogyodanchi, Utsunomiya-shi, Tochigi 321-3298, Japan

Yuichi Iwasaki

Canon Inc., 23-10 Kiyohara-Kogyodanchi, Utsunomiya-shi, Tochigi 321-3298, Japan

Akinori Ohkubo

Canon Inc., 23-10 Kiyohara-Kogyodanchi, Utsunomiya-shi, Tochigi 321-3298, Japan

Miyoko Kawashima

Canon Inc., 23-10 Kiyohara-Kogyodanchi, Utsunomiya-shi, Tochigi 321-3298, Japan

Minoru Yoshii

Canon Inc., 23-10 Kiyohara-Kogyodanchi, Utsunomiya-shi, Tochigi 321-3298, Japan

J. Micro/Nanolith. MEMS MOEMS. 5(4), 043004 (November 20, 2006). doi:10.1117/1.2397018
History: Received August 12, 2006; Accepted August 25, 2006; Published November 20, 2006
Text Size: A A A

The chemical amplification provides high sensitivity of resists for deep-uv and extreme-uv (EUV) lithography. On the other hand, the chemical amplification involves photoacid diffusion that causes contrast degradation of the latent image or, in other words, resist blur. We study the influence of the resist blur in high–numerical aperture ArF immersion lithography by using an interferometric exposure tool. The contrast ratio between the resist latent image and the original aerial image was measured for half pitches from 45 to 80nm. Acid diffusion length for a high-resolution ArF resist was determined as 11nm in sigma (26nm in full width at half maximum) assuming a Gaussian blur kernel. The results revealed that the influence of the resist blur is a significant issue for the 45-nm half-pitch node. The reduction of acid diffusion length is highly desirable. Given the tradeoff between the resist resolution and sensitivity, increasing illumination intensity in exposure tools can be an effective means to overcome the challenge of the resist blur. We also demonstrate resist imaging of 30-nm line-and-space pattern with a high-index fluid. While our focus is on ArF immersion lithography, our findings are also relevant to EUV lithography.

Figures in this Article
© 2006 Society of Photo-Optical Instrumentation Engineers

Citation

Tokuyuki Honda ; Yasuhiro Kishikawa ; Yuichi Iwasaki ; Akinori Ohkubo ; Miyoko Kawashima, et al.
"Influence of resist blur on ultimate resolution of ArF immersion lithography", J. Micro/Nanolith. MEMS MOEMS. 5(4), 043004 (November 20, 2006). ; http://dx.doi.org/10.1117/1.2397018


Tables

Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Journal Articles

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.