Articles

Resist deconstruction as a probe for innate material roughness

[+] Author Affiliations
Theodore H. Fedynyshyn

Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, Massachusetts 02420

Roger F. Sinta

Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, Massachusetts 02420

David K. Astolfi

Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, Massachusetts 02420

Russell B. Goodman

Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, Massachusetts 02420

Alberto Cabral

Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, Massachusetts 02420

Jeanette Roberts

Intel Corporation, Hillsboro, Oregon 97124

Robert Meagley

Intel Corporation at Lawrence Berkeley National Laboratory, Berkeley, California 94720

J. Micro/Nanolith. MEMS MOEMS. 5(4), 043010 (December 29, 2006). doi:10.1117/1.2408410
History: Received April 13, 2006; Revised August 31, 2006; Accepted September 03, 2006; Published December 29, 2006
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We developed an atomic force microscopy (AFM)-based technique to measure intrinsic material roughness after base development. This method involves performing an interrupted development of the resist film and measuring the resulting film roughness after a certain fixed film loss. Employing this technique, we have deconstructed the resist into component materials and established that the photoacid generator (PAG) is a major material contributor of film roughness and that PAG segregation in the resist is likely responsible for nanoscale dissolution inhomogeneities. Small differences in PAG concentration as a result of standing waves in the resist can lead to large changes in surface roughness due to PAG or PAG-photoproduct segregation and the resultant nonlinear change in nanoscale dissolution rates. The temperature dependence of the PAG segregation suggests that increased mobility of the PAG that occurs may be due to a lowering of the film Tg during the deprotection process.

© 2006 Society of Photo-Optical Instrumentation Engineers

Citation

Theodore H. Fedynyshyn ; Roger F. Sinta ; David K. Astolfi ; Russell B. Goodman ; Alberto Cabral, et al.
"Resist deconstruction as a probe for innate material roughness", J. Micro/Nanolith. MEMS MOEMS. 5(4), 043010 (December 29, 2006). ; http://dx.doi.org/10.1117/1.2408410


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