Articles

Complementary dose and geometrical solutions for electron beam direct write lithography proximity effects correction: application for sub-45-nm node product manufacturing

[+] Author Affiliations
Serdar Manakli

STMicroelectronics, 850 rue J. Monnet, 38926 Crolles, France

Christophe Soonekindt

Philips Semiconductors, 850 rue J. Monnet, 38926 Crolles, France

Laurent Pain

Laboratoire d'électronique de technologie et d'instrumentation-Commissariat à Energie Atomique, 17 rue des Martyrs, 38054 Grenoble Cedex 09, France

Jean-Christophe Le-Denmat

STMicroelectronics, 850 rue J. Monnet, 38926 Crolles, France

Jérôme Todeschini

Philips Semiconductors, 850 rue J. Monnet, 38926 Crolles, France

Béatrice Icard

Laboratoire d'électronique de technologie et d'instrumentation-Commissariat à Energie Atomique, 17 rue des Martyrs, 38054 Grenoble Cedex 09, France

Blandine Minghetti

STMicroelectronics, 850 rue J. Monnet, 38926 Crolles, France

J. Micro/Nanolith. MEMS MOEMS. 6(3), 033001 (August 13, 2007). doi:10.1117/1.2770472
History: Received July 26, 2006; Revised February 05, 2007; Accepted April 06, 2007; Published August 13, 2007
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After the successful results obtained in the last few years, electron beam direct write (EBDW) lithography for use in integrated circuit manufacturing has now been demonstrated. However, throughput and resolution capabilities need to be improved to push its interest for fast cycle production and advanced research and development applications. In this way, the process development needs good patterns dimensional accuracy, i.e., a better control of the proximity effects caused by backscattering electrons and others phenomenon. In this work, the limitations of the dose modulation method are investigated through the change of dose number steps and the use of a more accurate point spread function. To continue reducing feature sizes, a method to provide a complementary correction to the dose modulation solution is proposed. This rule-based electron beam proximity correction, or REBPC, provides good results down to 40nm.

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© 2007 Society of Photo-Optical Instrumentation Engineers

Citation

Serdar Manakli ; Christophe Soonekindt ; Laurent Pain ; Jean-Christophe Le-Denmat ; Jérôme Todeschini, et al.
"Complementary dose and geometrical solutions for electron beam direct write lithography proximity effects correction: application for sub-45-nm node product manufacturing", J. Micro/Nanolith. MEMS MOEMS. 6(3), 033001 (August 13, 2007). ; http://dx.doi.org/10.1117/1.2770472


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