Articles

Exposure dose dependence on line edge roughness of a latent image in electron beam/extreme ultraviolet lithographies studied by Monte Carlo technique

[+] Author Affiliations
Akinori Saeki

Osaka University, The Institute of Scientific and Industrial Research, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

Takahiro Kozawa

Osaka University, The Institute of Scientific and Industrial Research, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

Seiichi Tagawa

Osaka University, The Institute of Scientific and Industrial Research, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

Heidi B. Cao

Intel Corporation, 5200 Northeast Elam Young Parkway, Hillsboro, Oregon 97124

Hai Deng

Intel Corporation, 5200 Northeast Elam Young Parkway, Hillsboro, Oregon 97124

Michael J. Leeson

Intel Corporation, 5200 Northeast Elam Young Parkway, Hillsboro, Oregon 97124

J. Micro/Nanolith. MEMS MOEMS. 6(4), 043004 (October 18, 2007). doi:10.1117/1.2792178
History: Received October 10, 2006; Revised April 06, 2007; Accepted June 15, 2007; Published October 18, 2007
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Of great importance in post-optical lithographies, such as electron beam (EB) and extreme ultraviolet, is the improvement of line edge roughness or line width roughness of patterned resists. We provide an exposure dose dependence on LER of a latent image in chemically amplified EB resist from 1 to 50μCcm2. By using a Monte Carlo simulation and empirical equations, the effects of exposure dose and amine concentration on LER are investigated in terms of shot noise and image contrast. We make clear the correlation between LER and the fluctuation of the initial number of acid molecules generated in resists.

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© 2007 Society of Photo-Optical Instrumentation Engineers

Citation

Akinori Saeki ; Takahiro Kozawa ; Seiichi Tagawa ; Heidi B. Cao ; Hai Deng, et al.
"Exposure dose dependence on line edge roughness of a latent image in electron beam/extreme ultraviolet lithographies studied by Monte Carlo technique", J. Micro/Nanolith. MEMS MOEMS. 6(4), 043004 (October 18, 2007). ; http://dx.doi.org/10.1117/1.2792178


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