Articles

Limiting factors for electron beam lithography when using ultra-thin hydrogen silsesquioxane layers

[+] Author Affiliations
Anda E. Grigorescu

Delft University of Technology, Charged Particle Optics Group, Delft 2628 CJ, The Netherlands

Marco C. van der Krogt

Delft University of Technology, Kavli Institute of Nanoscience, Nanofacility, The Netherlands

Cornelis W. Hagen

Delft University of Technology, Charged Particle Optics Group, Delft 2628 CJ, The Netherlands

J. Micro/Nanolith. MEMS MOEMS. 6(4), 043006 (December 07, 2007). doi:10.1117/1.2816459
History: Received February 12, 2007; Revised June 16, 2007; Accepted July 03, 2007; Published December 07, 2007
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Isolated dots and lines with 6nm width are written in 20-nm-thick hydrogen silsesquioxane (HSQ) layers on silicon substrates, using 100-keV electron beam lithography. The main factors that might limit the resolution, i.e., beam size, writing strategy, resist material, electron dose, and development process, are discussed. We demonstrate that, by adjusting the development process, a very high resolution can be obtained. We report the achievement of 7nm lines at a 20-nm pitch written in a 10-nm-thick HSQ layer, using a potassium-hydroxide (KOH)-based developer instead of a classical tetra-methyl-ammonium hydroxide (TMAH) developer. This is the smallest pitch achieved to date using HSQ resist. We think that the resolution can be improved further, and is presently limited by either the beam diameter (which was not measured separately) or by the not-fully-optimized development process.

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© 2007 Society of Photo-Optical Instrumentation Engineers

Citation

Anda E. Grigorescu ; Marco C. van der Krogt and Cornelis W. Hagen
"Limiting factors for electron beam lithography when using ultra-thin hydrogen silsesquioxane layers", J. Micro/Nanolith. MEMS MOEMS. 6(4), 043006 (December 07, 2007). ; http://dx.doi.org/10.1117/1.2816459


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