Articles

Optical critical dimension measurement of silicon grating targets using back focal plane scatterfield microscopy

[+] Author Affiliations
Heather J. Patrick

National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899 and KT Consulting, Inc., Antioch, California 94509

Ravikiran Attota

National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899 and KT Consulting, Inc., Antioch, California 94509

Bryan M. Barnes

National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899

Thomas A. Germer

National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899

Ronald G. Dixson

National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899

Michael T. Stocker

National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899

Richard M. Silver

National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899

Michael R. Bishop

International SEMATECH, Montopolis Drive, Austin, Texas 78741

J. Micro/Nanolith. MEMS MOEMS. 7(1), 013012 (March 13, 2008). doi:10.1117/1.2885275
History: Received February 05, 2007; Revised September 28, 2007; Accepted November 27, 2007; Published March 13, 2008
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We demonstrate optical critical dimension measurement of lines in silicon grating targets using back focal plane scatterfield microscopy. In this technique, angle-resolved diffraction signatures are obtained from grating targets by imaging the back focal plane of a bright-field microscope that has been modified to allow selection of the angular distribution and polarization of the incident illumination. The target line profiles, including critical dimension linewidth and sidewall angle, are extracted using a scatterometry method that compares the diffraction signatures to a library of theoretical signatures. Because we use the zero-order component of the diffraction, the target features need not be resolved in order to obtain the line profile. We extracted line profiles from two series of targets with fixed pitch but varying linewidth: a subresolution 300-nm-pitch series, and a resolved 600-nm-pitch series. Linewidths of 131nm to 139nm were obtained, with nanometer-level sensitivity to linewidth, and a linear relationship of linewidth obtained from scatterfield microscopy to linewidth measured by scanning electron microscopy was demonstrated. Conventional images can be easily collected on the same microscope, providing a powerful tool for combining imaging metrology with scatterometry for optical critical dimension measurement.

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© 2008 Society of Photo-Optical Instrumentation Engineers

Citation

Heather J. Patrick ; Ravikiran Attota ; Bryan M. Barnes ; Thomas A. Germer ; Ronald G. Dixson, et al.
"Optical critical dimension measurement of silicon grating targets using back focal plane scatterfield microscopy", J. Micro/Nanolith. MEMS MOEMS. 7(1), 013012 (March 13, 2008). ; http://dx.doi.org/10.1117/1.2885275


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