Special Section on Silicon-Based MOEMS and Their Applications

Tunable external cavity diode laser using a micromachined silicon flexure and a volume holographic reflection grating for applications in atomic optics

[+] Author Affiliations
Ho-Chiao Chuang

University of Colorado at Boulder, Department of Mechanical Engineering, Boulder, Colorado 80309-0427

Ricardo Jiménez-Martínez

University of Colorado at Boulder, Department of Physics, Boulder, Colorado 80309-0440

Simon Braun

University of Colorado at Boulder, Department of Physics, Boulder, Colorado 80309-0440

Dana Z. Anderson

University of Colorado at Boulder, Department of Physics, Boulder, Colorado 80309-0440

Victor M. Bright

University of Colorado at Boulder, Department of Mechanical Engineering, Boulder, Colorado 80309-0427

J. Micro/Nanolith. MEMS MOEMS. 7(2), 021010 (May 13, 2008). doi:10.1117/1.2911630
History: Received September 18, 2007; Revised February 05, 2008; Accepted February 13, 2008; Published May 13, 2008
Text Size: A A A

We present a novel external cavity diode laser design developed for applications in atomic physics that employs a micromachined silicon flexure to sweep the laser frequency and a volume holographic reflection grating (VHG) to provide the optical feedback. The advantages of using a silicon flexure are its simple microfabrication process and reduction of the overall size of the laser system. The results demonstrate the Rb87, Rb85 (rubidium) D2 line absorption at 780nm in an atomic optics test experiment. Our novel laser system design has a size of 28.76×20.65×12mm. The wavelength can be tuned and swept from 780.2463 to 780.2379nm (equivalent to 4.14GHz) using piezoelectric transducer (PZT) actuators integrated on the silicon flexure. A frequency tuning range of 17.149GHz can be obtained by changing the VHG temperature. The deflection of the silicon flexure is 129.19nm. The advantage of combining a VHG and a silicon flexure is that the frequency can be coarsely tuned to 780.24nm and swept at this center frequency with a range of 4.14GHz by PZT. Moreover, the frequency fine tuning can be achieved by changing the VHG temperature to observe the rubidium spectrum. The laser output power is measured as 59mW at 780.2474nm.

© 2008 Society of Photo-Optical Instrumentation Engineers

Citation

Ho-Chiao Chuang ; Ricardo Jiménez-Martínez ; Simon Braun ; Dana Z. Anderson and Victor M. Bright
"Tunable external cavity diode laser using a micromachined silicon flexure and a volume holographic reflection grating for applications in atomic optics", J. Micro/Nanolith. MEMS MOEMS. 7(2), 021010 (May 13, 2008). ; http://dx.doi.org/10.1117/1.2911630


Tables

Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.