1 April 2008 Tunable external cavity diode laser using a micromachined silicon flexure and a volume holographic reflection grating for applications in atomic optics
Ho-Chiao Chuang, Ricardo Jimenez-Martinez, Simon Braun, Dana Z. Anderson, Victor M. Bright
Author Affiliations +
Abstract
We present a novel external cavity diode laser design developedfor applications in atomic physics that employs a micromachinedsilicon flexure to sweep the laser frequency and a volume holographicreflection grating (VHG) to provide the optical feedback. The advantages of using a silicon flexure are its simple microfabrication process and reduction of the overall size of the laser system. The results demonstrate the 87Rb, 85Rb (rubidium) D2 line absorption at 780 nm in an atomicoptics test experiment. Our novel laser system design has a size of28.76×20.65×12 mm. The wavelength can be tuned and swept from 780.2463 to 780.2379 nm equivalent to 4.14 GHz using piezoelectric transducer (PZT) actuators integrated on the silicon flexure. A frequency tuning range of 17.149 GHz can be obtained by changing the VHG temperature. The deflection of the silicon flexure is 129.19 nm. The advantage of combining a VHG and a silicon flexure is that the frequency can be coarsely tuned to 780.24 nm and swept at this center frequency with a range of 4.14 GHz by PZT. Moreover, the frequency fine tuning can be achieved by changing the VHG temperature to observe the rubidium spectrum. The laser output power is measured as 59 mW at 780.2474 nm.
©(2008) Society of Photo-Optical Instrumentation Engineers (SPIE)
Ho-Chiao Chuang, Ricardo Jimenez-Martinez, Simon Braun, Dana Z. Anderson, and Victor M. Bright "Tunable external cavity diode laser using a micromachined silicon flexure and a volume holographic reflection grating for applications in atomic optics," Journal of Micro/Nanolithography, MEMS, and MOEMS 7(2), 021010 (1 April 2008). https://doi.org/10.1117/1.2911630
Published: 1 April 2008
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CITATIONS
Cited by 5 scholarly publications.
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KEYWORDS
Semiconductor lasers

Silicon

Ferroelectric materials

Rubidium

Actuators

Doppler effect

Temperature metrology

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