High-resolution permanent photoresist laminate for microsystem applications

U. Stohr; P. Vulto; P. Hoppe; Gerald A. Urban; Holger Reinecke

doi:10.1117/1.2964217

1 July 2008 High-resolution permanent photoresist laminate for microsystem applications

U. Stohr, P. Vulto, P. Hoppe, Gerald A. Urban, Holger Reinecke

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 7, Issue 3, 033009 (July 2008). https://doi.org/10.1117/1.2964217

Abstract

A new permanent dry film photoresist, TMMF S2000, is tested and evaluated for microsystem applications. The resist provides high resolution, high aspect ratios, and homogeneous resist thicknesses. Aspect ratios up to 6:1 (height:width) may be achieved for both structures and channels. Buried structures are created by covering channels with a laminated resist layer. In addition, a very fast direct wafer bonding process is developed. In this process, the resist is patterned on a wafer and directly bonded to a second wafer using pressure and heat. Both techniques enable the fabrication of microfluidic chips with high aspect ratio structures.

©(2008) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

U. Stohr, P. Vulto, P. Hoppe, Gerald A. Urban, and Holger Reinecke "High-resolution permanent photoresist laminate for microsystem applications," Journal of Micro/Nanolithography, MEMS, and MOEMS 7(3), 033009 (1 July 2008). https://doi.org/10.1117/1.2964217

Published: 1 July 2008

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