Articles

Source for extreme ultraviolet lithography by the tabletop storage ring MIRRORCLE

[+] Author Affiliations
Hironari Yamada

Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan

Dorian Minkov

Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan

Norio Toyosugi, Masaki Morita, Daisuke Hasegawa, Ahsa Moon, Ejike Kenneth Okoye

Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan

J. Micro/Nanolith. MEMS MOEMS. 7(4), 043004 (December 10, 2008). doi:10.1117/1.3040017
History: Received July 17, 2008; Revised August 28, 2008; Accepted October 16, 2008; Published December 10, 2008
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Advances of electron storage rings to beam currents of above 1A and tabletop sizes make possible the development of a synchrotron-based source for EUV lithography (EUVL) at 13.5-nm wavelength. The MIRRORCLE storage rings can provide on average 3-A electron beam current, 1-min lifetime, 15-ms radiation damping, and beam size 3*3mm2. MIRRORCLE-20SX, MIRRORCLE-6X, and MIRRORCLE-CV4 store electrons with energies of 20MeV, 6MeV, and 4MeV, respectively. These machines can emit EUV from a tiny target, hit by the circulating beam, via transition radiation or diffusive radiation. Using a multilayer microelectromechanical system (MEMS) target allows enhancement and spectral purification of the emitted EUV. Aligning many such MEMS along the electron beam orbit and radiation collection by only one quasi-elliptical EUV mirror can provide EUV satisfying the joint requirements for an EUVL source.

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© 2008 Society of Photo-Optical Instrumentation Engineers

Citation

Hironari Yamada ; Dorian Minkov ; Norio Toyosugi ; Masaki Morita ; Daisuke Hasegawa, et al.
"Source for extreme ultraviolet lithography by the tabletop storage ring MIRRORCLE", J. Micro/Nanolith. MEMS MOEMS. 7(4), 043004 (December 10, 2008). ; http://dx.doi.org/10.1117/1.3040017


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