Articles

High-accuracy correction of critical dimension errors taking sequence of large-scale integrated circuits fabrication processes into account

[+] Author Affiliations
Takayuki Abe

Nuflare Technology Inc., Marketing Department, 3-2-6 Shin-Yokohama, Kohoku-ku, Yokohama 222-0033, Japan

Jun Yashima

Nuflare Technology Inc., Mask Drawing Equipment Development Department, 8, Shinsugita, Isogo-ku, Yokohama, Kanagawa 235-0032, Japan

Hayato Shibata

Nuflare Technology Inc., Mask Drawing Equipment Development Department, 8, Shinsugita, Isogo-ku, Yokohama, Kanagawa 235-0032, Japan

Yasuo Kato

Nuflare Technology Inc., Mask Drawing Equipment Development Department, 8, Shinsugita, Isogo-ku, Yokohama, Kanagawa 235-0032, Japan

Hiroshi Matsumoto

Nuflare Technology Inc., EB Mask Equipment Engineering Department, 2068-3, Ooka, Numazu-shi, Shizuoka 410-8510, Japan

Tomohiro Iijima

Nuflare Technology Inc., EB Mask Equipment Engineering Department, 2068-3, Ooka, Numazu-shi, Shizuoka 410-8510, Japan

J. Micro/Nanolith. MEMS MOEMS. 7(4), 043008 (November 14, 2008). doi:10.1117/1.3013546
History: Received February 13, 2008; Revised July 23, 2008; Accepted August 22, 2008; Published November 14, 2008
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We previously proposed a new method to correct critical dimension (CD) errors appearing in large-scale integrated circuit (LSI) fabrication processes, such as long range loading effect, local flare, and micro loading effect. The method provides high accuracy correction dimensions when using the pattern modulation method (method correcting CD errors by controlling figure sizes of LSI patterns). Now the case that several processes cause CD errors when a layer of an LSI pattern is fabricated on a wafer is discussed. These CD errors are corrected by generalizing the method proposed previously and taking the sequence of processes into account. It is shown from numerical calculation that the method can suppress the CD error to less than 0.01nm with three iterations, under the condition that the maximum CD errors by micro loading effect and flare are 10nm and 20nm, respectively. It is strongly suggested that our methods will provide the necessary CD accuracies in the future.

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© 2008 Society of Photo-Optical Instrumentation Engineers

Citation

Takayuki Abe ; Jun Yashima ; Hayato Shibata ; Yasuo Kato ; Hiroshi Matsumoto, et al.
"High-accuracy correction of critical dimension errors taking sequence of large-scale integrated circuits fabrication processes into account", J. Micro/Nanolith. MEMS MOEMS. 7(4), 043008 (November 14, 2008). ; http://dx.doi.org/10.1117/1.3013546


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