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Extraction of Young’s modulus and residual stress of structural materials through measurement of pull-in voltage and off-capacitance of beams

[+] Author Affiliations
Jaibir Sharma

Indian Institute of Technology Madras, Department of Electrical Engineering, Microelectronics and MEMS Research Laboratory, Chennai 600036 India

Amitava DasGupta

Indian Institute of Technology Madras, Department of Electrical Engineering, Microelectronics and MEMS Research Laboratory, Chennai 600036 India

J. Micro/Nanolith. MEMS MOEMS. 7(4), 043020 (October 09, 2008). doi:10.1117/1.2990734
History: Received January 28, 2008; Accepted July 24, 2008; Published October 09, 2008
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The mechanical properties of the structural layer play an important role in the design and optimization of microelectromechanical system structures. The pull-in measurement is a popular technique used to measure the mechanical properties of a material, but its success depends on the accurate measurement of the gap (g) between the beam and the ground plane and its uniformity. We propose a novel technique that does not require accurate knowledge of the value of g. In our proposed method, a large number of beams with different lengths (L) are to be fabricated simultaneously and the off-capacitance (Coff) in addition to pull-in voltage (Vpi) measured in the same setup. To get accurate results, the range of length of beams must be properly chosen. We show, with the help of simulations, that by using our method the material properties can be extracted very accurately even when the gap (g) is nonuniform.

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© 2008 Society of Photo-Optical Instrumentation Engineers

Citation

Jaibir Sharma and Amitava DasGupta
"Extraction of Young’s modulus and residual stress of structural materials through measurement of pull-in voltage and off-capacitance of beams", J. Micro/Nanolith. MEMS MOEMS. 7(4), 043020 (October 09, 2008). ; http://dx.doi.org/10.1117/1.2990734


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