Special Section on Double-Patterning Lithography

Materials modeling and development for use in double-exposure lithography applications

[+] Author Affiliations
Saul Lee

The University of Texas at Austin, Department of Chemical Engineering, Austin, Texas 78712

Kane Jen

The University of Texas at Austin, Department of Chemical Engineering, Austin, Texas 78712

C. Grant Willson

The University of Texas at Austin, Department of Chemical Engineering, Austin, Texas 78712

Jeffrey Byers

SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741

Paul Zimmerman

SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741

Nicholas J. Turro

Columbia University, Department of Chemistry, New York, New York 10027

J. Micro/Nanolith. MEMS MOEMS. 8(1), 011011 (March 06, 2009). doi:10.1117/1.3095589
History: Received April 30, 2008; Revised October 15, 2008; Accepted January 26, 2009; Published March 06, 2009
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The current optical photolithography technology is approaching the physical barrier to the minimum achievable feature size. To produce smaller devices, new resolution enhancement technologies must be developed. Double-exposure lithography has shown promise as a potential pathway that is attractive because it is much cheaper than double-patterning lithography and can be deployed on existing imaging tools. However, this technology is not possible without the development of new materials with nonlinear response to exposure dose. The performance of existing materials such as reversible contrast enhancement layers (rCELs), and theoretical materials such as intermediate state two-photon (ISTP) and optical threshold layer (OTL) materials in double-exposure applications have been investigated through computer simulation. All three materials yielded process windows in double-exposure mode. OTL materials showed the largest process window (depth of focus (DOF) 0.14μm, exposure latitude (EL) 5.1%). ISTP materials had the next-largest process window (DOF 0.12μm, EL 3.2%), followed by the rCEL (0.11μm, 0.58%). This study is an analysis of the feasibility of using the materials in double-exposure mode.

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© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Saul Lee ; Kane Jen ; C. Grant Willson ; Jeffrey Byers ; Paul Zimmerman, et al.
"Materials modeling and development for use in double-exposure lithography applications", J. Micro/Nanolith. MEMS MOEMS. 8(1), 011011 (March 06, 2009). ; http://dx.doi.org/10.1117/1.3095589


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