Articles

Influence of resist blur on resolution of hyper-NA immersion lithography beyond 45-nm half-pitch

[+] Author Affiliations
Minoru Yoshii

Canon, Inc., 23-10 Kiyohara-Kogyodanchi, Utsunomiya-shi, Tochigi 321-3298 and Utsunomiya University, Center for Optical Research and Education, 7-1-2 Yoto, Utsunomiya-shi, Tochigi 321-8585, Japan

Yasuhiro Kishikawa

Canon, Inc., 23-10 Kiyohara-Kogyodanchi, Utsunomiya-shi, Tochigi 321-3298, Japan

Yuichi Iwasaki

Canon, Inc., 23-10 Kiyohara-Kogyodanchi, Utsunomiya-shi, Tochigi 321-3298, Japan

Akinori Ohkubo

Canon, Inc., 23-10 Kiyohara-Kogyodanchi, Utsunomiya-shi, Tochigi 321-3298, Japan

Miyoko Kawashima

Canon, Inc., 23-10 Kiyohara-Kogyodanchi, Utsunomiya-shi, Tochigi 321-3298, Japan

Seiji Takeuchi

Canon, Inc., 23-10 Kiyohara-Kogyodanchi, Utsunomiya-shi, Tochigi 321-3298, Japan

Tokuyuki Honda

Canon, Inc., 23-10 Kiyohara-Kogyodanchi, Utsunomiya-shi, Tochigi 321-3298, Japan

Toyohiko Yatagai

Utsunomiya University, Center for Optical Research and Education, 7-1-2 Yoto, Utsunomiya-shi, Tochigi 321-8585, Japan

J. Micro/Nanolith. MEMS MOEMS. 8(1), 013003 (January 07, 2009). doi:10.1117/1.3059551
History: Received December 09, 2007; Revised September 11, 2008; Accepted September 22, 2008; Published January 07, 2009
Text Size: A A A

For lithography of 45-nm half-pitch and beyond, the resist blur due to photoacid diffusion is a significant issue. On the other hand, it has been generally recognized that there is a trade-off between resist resolution and sensitivity. We study the influence of the resist blur on resolution in hypernumerical aperture ArF immersion lithography by utilizing a two-beam interferometric exposure tool. We evaluated the current photoresist performance for some of the latest commercial resists and estimated their acid diffusion lengths as 8nmto9nm in sigma assuming Gaussian blur kernel. In addition, we found that the acid diffusion length, which is directly related to the resist resolution and is controllable by photoacid generator (PAG) anion size, polymer resin size, and post-exposure bake (PEB) temperature. We confirmed that there is a trade-off between resist resolution and sensitivity. Our results indicate that the resist blur is still a concern in order to extend lithography for 45nm and beyond; however, it will not likely be a showstopper. We consider that total optimization of resists and exposure tools is important in order to achieve ultimate resolution in hyper-NA immersion lithography.

Figures in this Article
© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Minoru Yoshii ; Yasuhiro Kishikawa ; Yuichi Iwasaki ; Akinori Ohkubo ; Miyoko Kawashima, et al.
"Influence of resist blur on resolution of hyper-NA immersion lithography beyond 45-nm half-pitch", J. Micro/Nanolith. MEMS MOEMS. 8(1), 013003 (January 07, 2009). ; http://dx.doi.org/10.1117/1.3059551


Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement


 

  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.