Articles

Fabrication of continuous V-grooves with Si(110) sidewalls using TiO2 resist mask by anisotropic wet etching

[+] Author Affiliations
Xiaoming Yu

Northeastern University, Institute of Materials Physics and Chemistry, School of Sciences, Number 11, Lane 3, WenHua Road, HePing District, Shenyang 110004, China

Bingsen Zhang

Northeastern University, Institute of Materials Physics and Chemistry, School of Sciences, Number 11, Lane 3, WenHua Road, HePing District, Shenyang 110004, China

Jing Guo

Northeastern University, Institute of Materials Physics and Chemistry, School of Sciences, Number 11, Lane 3, WenHua Road, HePing District, Shenyang 110004, China

Huazhe Yang

Northeastern University, Institute of Materials Physics and Chemistry, School of Sciences, Number 11, Lane 3, WenHua Road, HePing District, Shenyang 110004, China

Ying Zhang

Northeastern University, Institute of Materials Physics and Chemistry, School of Sciences, Number 11, Lane 3, WenHua Road, HePing District, Shenyang 110004, China

Shimin Shen

Northeastern University, Institute of Materials Physics and Chemistry, School of Sciences, Number 11, Lane 3, WenHua Road, HePing District, Shenyang 110004, China

Yang Qi

Northeastern University, Ministry of Education, Key Laboratory for Anisotropy and Texture of Materials, Shenyang 110004, China

J. Micro/Nanolith. MEMS MOEMS. 8(1), 013012 (January 26, 2009). doi:10.1117/1.3074832
History: Received July 10, 2008; Revised November 28, 2008; Accepted December 12, 2008; Published January 26, 2009
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Modification for substrate surface morphology is a kind of effective technique for controlling thin film growth orientation. In this work, continuous V-grooves are fabricated on monocrystalline Si(100) substrate using TiO2 resist mask by anisotropic wet etching. Influence of thickness of TiO2 resist mask on etching patterns is investigated. The integrity and cross section of V-grooves are observed by laser scanning confocal microscope (LSCM) and scanning electronic microscopy (SEM), respectively. The floccules precipitating in V-grooves are verified by an energy dispersive spectrometer (EDS). Results indicate that the Si(100) substrate surface is modified to the array of V-grooves along the Si[010] direction with Si(110) sidewalls.

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© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Xiaoming Yu ; Bingsen Zhang ; Jing Guo ; Huazhe Yang ; Ying Zhang, et al.
"Fabrication of continuous V-grooves with Si(110) sidewalls using TiO2 resist mask by anisotropic wet etching", J. Micro/Nanolith. MEMS MOEMS. 8(1), 013012 (January 26, 2009). ; http://dx.doi.org/10.1117/1.3074832


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