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Direct etching of SiO2 and Al2O3 by 900-keV gold ions

[+] Author Affiliations
Gary A. Glass

University of Louisiana at Lafayette, Louisiana Accelerator Center Physics Department, P.O. Box 42410, Lafayette, Louisiana 70504-2410 glass@louisiana.edu

Johnny F. Dias, Alexander D. Dymnikov, Louis M. Houston

University of Louisiana at Lafayette, Louisiana Accelerator Center, P.O. Box 42410, Lafayette, Louisiana 70504-2410

Bibhudutta Rout

University of North Texas, Department of Physics, P.O. Box 311427, Denton, Texas 76203

J. Micro/Nanolith. MEMS MOEMS. 8(1), 013013 (February 18, 2009). doi:10.1117/1.3082185
History: Received May 09, 2008; Revised September 15, 2008; Accepted January 08, 2009; Published February 18, 2009
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We report the direct etching of Al2O3 and SiO2 using 900-keVAu+ ions. 2000-mesh Cu grids were employed as masks using two different configurations: (1) the Cu mesh was placed on top of each insulator separately and independent irradiations were performed, and (2) the Al2O3 and SiO2 substrates were positioned in an edge-to-edge configuration with a single Cu grid providing a common mask to both insulators. Scanning electron microscopy (SEM) analysis revealed quite different patterns resulting from the two irradiation configurations. While the irradiation using individual masks resulted in mirror-image patterns of the Cu mask in the substrates, the use of a common mask led to single line structures approximately normal to the edges of the substrates. The role of charge buildup and sputtering in relation to relative dielectric properties of the substrates and close proximity of the samples during irradiation is discussed.

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© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Gary A. Glass ; Johnny F. Dias ; Alexander D. Dymnikov ; Louis M. Houston and Bibhudutta Rout
"Direct etching of SiO2 and Al2O3 by 900-keV gold ions", J. Micro/Nanolith. MEMS MOEMS. 8(1), 013013 (February 18, 2009). ; http://dx.doi.org/10.1117/1.3082185


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