Special Section on Extreme-Ultraviolet Interference Lithography

Engineering study of extreme ultraviolet interferometric lithography

[+] Author Affiliations
Fan Jiang

University of Wisconsin-Madison, Department of Physics and Center for Nanotechnology, 2444 Engineering Hall, 1415 Engineering Drive, Madison, Wisconsin 53706

Yang-Chun Cheng

University of Wisconsin-Madison, Materials Science Program and Center for Nanotechnology, 2444 Engineering Hall, 1415 Engineering Drive, Madison, Wisconsin 53706

Artak Isoyan

University of Wisconsin-Madison, Center for Nanotechnology, 2444 Engineering Hall, 1415 Engineering Drive, Madison, Wisconsin 53706

Franco Cerrina

University of Wisconsin-Madison, Department of Electrical and Computer Engineering and Center for Nanotechnology, 1415 Engineering Drive, ECE 3539, Madison, Wisconsin 53706

J. Micro/Nanolith. MEMS MOEMS. 8(2), 021203 (April 03, 2009). doi:10.1117/1.3112006
History: Received November 04, 2008; Revised February 05, 2009; Accepted February 16, 2009; Published April 03, 2009
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Extreme ultraviolet interferometric lithography (EUV-IL) is a powerful nanopatterning technique, exploiting the interference of two beams of short-wavelength radiation (λ13nm) to form high-accuracy fringe patterns. Transmission diffraction gratings of appropriate period (40100nm) are used to form the beams; the substrate is located in the region of overlap to expose the photoresist material, recording 2050nm interference fringe patterns. Although the physics of EUV-IL is simple, its actual implementation is not and requires attention to detail in order to fully exploit the power of the technique. In order to understand the impact of realistic physical conditions on the performance of EUV-IL, we have developed a set of accurate numerical models based on the Rayleigh–Sommerfeld diffraction theory. These modeling tools are then applied to generate a complete and accurate analysis of EUV-IL, taking into account all the relevant physical processes, from finite extent of the gratings to the partial coherence of the source, and including detailed physical structure of the mask. The results are used to guide the design and implementation of EUV-IL exposure systems, down to the sub-11-nm range.

© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Fan Jiang ; Yang-Chun Cheng ; Artak Isoyan and Franco Cerrina
"Engineering study of extreme ultraviolet interferometric lithography", J. Micro/Nanolith. MEMS MOEMS. 8(2), 021203 (April 03, 2009). ; http://dx.doi.org/10.1117/1.3112006


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