Special Section on Extreme-Ultraviolet Interference Lithography

Extreme ultraviolet interference lithography at the Paul Scherrer Institut

[+] Author Affiliations
Vaida Auzelyte, Christian Dais, Patrick Farquet

Paul Scherrer Institut, Laboratory for Micro- and Nanotechnology, Villigen 5232, Switzerland

Detlev Grützmacher

Institute of Bio- and Nanosystems 1, Research Center of Jülich, 52425 Jülich, Germany

Laura J. Heyderman, Feng Luo

Paul Scherrer Institut, Laboratory for Micro- and Nanotechnology, Villigen 5232, Switzerland

Sven Olliges

Swiss Federal Institute of Technology (ETH) Zurich, Laboratory for Nanometallurgy, Department of Materials, Wolfgang-Pauli-Strausse 10, Zurich, CH-8093, Switzerland

Celestino Padeste, Pratap K. Sahoo

Paul Scherrer Institut, Laboratory for Micro- and Nanotechnology, Villigen 5232, Switzerland

Tom Thomson

University of Manchester Oxford Road, School of Computer Science, Kilburn Building, Manchester M13 9PL, United Kingdom

Andrey Turchanin

University of Bielefeld, Faculty of Physics, Physics of Supermolecular Systems, D-33615 Bielefeld, Germany

Christian David

Paul Scherrer Institut, Laboratory for Micro- and Nanotechnology, Villigen 5232, Switzerland

Harun H. Solak

Paul Scherrer Institut, Laboratory for Micro- and Nanotechnology and Eulitha AG, Villigen 5232, Switzerland

J. Micro/Nanolith. MEMS MOEMS. 8(2), 021204 (April 27, 2009). doi:10.1117/1.3116559
History: Received October 26, 2008; Revised February 05, 2009; Accepted March 02, 2009; Published April 27, 2009
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We review the performance and applications of an extreme ultraviolet interference lithography (EUV-IL) system built at the Swiss Light Source of the Paul Scherrer Institut (Villigen, Switzerland). The interferometer uses fully coherent radiation from an undulator source. 1-D (line/space) and 2-D (dot/hole arrays) patterns are obtained with a transmission-diffraction-grating type of interferometer. Features with sizes in the range from one micrometer down to the 10-nm scale can be printed in a variety of resists. The highest resolution of 11-nm half-pitch line/space patterns obtained with this method represents a current record for photon based lithography. Thanks to the excellent performance of the system in terms of pattern resolution, uniformity, size of the patterned area, and the throughput, the system has been used in numerous applications. Here we demonstrate the versatility and effectiveness of this emerging nanolithography method through a review of some of the applications, namely, fabrication of metallic and magnetic nanodevice components, self-assembly of SiGe quantum dots, chemical patterning of self-assembled monolayers (SAM), and radiation grafting of polymers.

Figures in this Article
© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Vaida Auzelyte ; Christian Dais ; Patrick Farquet ; Detlev Grützmacher ; Laura J. Heyderman, et al.
"Extreme ultraviolet interference lithography at the Paul Scherrer Institut", J. Micro/Nanolith. MEMS MOEMS. 8(2), 021204 (April 27, 2009). ; http://dx.doi.org/10.1117/1.3116559


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