Special Section on Extreme-Ultraviolet Interference Lithography

Extreme ultraviolet interference lithography as applied to photoresist studies

[+] Author Affiliations
Roel Gronheid

IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium

Michael J. Leeson

Intel Corp./IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium

J. Micro/Nanolith. MEMS MOEMS. 8(2), 021205 (May 05, 2009). doi:10.1117/1.3124188
History: Received October 16, 2008; Revised March 06, 2009; Accepted March 17, 2009; Published May 05, 2009
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Extreme ultraviolet interference lithography (EUV IL), especially in combination with tool-independent metrics for resist performance, is a powerful technique for judging progress with current resists, the potential of new materials and studying the fundamentals of resist performance. We provide an overview of how EUV IL is applied for resist testing and early material selections. Also discussed are examples of EUV IL being used to gain fundamental understanding for resist characterization under EUV imaging conditions.

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© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Roel Gronheid and Michael J. Leeson
"Extreme ultraviolet interference lithography as applied to photoresist studies", J. Micro/Nanolith. MEMS MOEMS. 8(2), 021205 (May 05, 2009). ; http://dx.doi.org/10.1117/1.3124188


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