Articles

Depth of focus enhancement for sub-110-nm technology by using KrF double-exposure lithography

[+] Author Affiliations
Liang Zhu

Chinese Academy of Science, Shanghai Institute of Microsystem Information Technology, 865 Changning Road, Shanghai 200050, China and Graduate School of Chinese Academy of Science, 19 Yuquan Road, Beijing 100049, China and Grace Semiconductor Manufacturing Corporation, 1399 Zuchongzhi Road, Shanghai 201203, China

Yingchun Zhang

Grace Semiconductor Manufacturing Corporation, 1399 Zuchongzhi Road, Shanghai 201203, China

Yili Gu

Grace Semiconductor Manufacturing Corporation, 1399 Zuchongzhi Road, Shanghai 201203, China

Steve Yang

Grace Semiconductor Manufacturing Corporation, 1399 Zuchongzhi Road, Shanghai 201203, China

Xiaohui Kang

Mentor Graphics Corporation, Room 2902 Jin Mao Tower, Shanghai 200120, China

J. Micro/Nanolith. MEMS MOEMS. 8(2), 023008 (June 18, 2009). doi:10.1117/1.3155515
History: Received October 29, 2008; Revised January 30, 2009; Accepted April 23, 2009; Published June 18, 2009
Text Size: A A A

Traditional double-exposure lithography (DEL) or double-patterning lithography (DPL) methodologies stem most from the resolution enhancement standpoint. A single mask with high feature densities is split into two exposure steps, each with lower feature densities that can be easily resolved. The DEL is proposed as the process window enhancement technology for sub-110-nm technology. Features with sparse pitches are printed by a first step of dense pitch exposures and a second exposure with dummy features removed. The pattern decomposition strategy described is similar to that of subresolution assisting features (SRAF). So it is compatible with the traditional rule-based SRAF implementation methodology. By comparing the depth of focus (DOF) of the 110-nm lithography process between the single exposure and the double exposure, it is found that the DOF for marginal features is extended by using double-exposure methodology, and thus extends the capability of KrF exposure tools. Furthermore, the link between the overlay performance and the overlap of the second exposure’s trim slots over the first exposure is studied. The results show that the overlay control is within the KrF scanner capability. As a further study, the proposed double-exposure methodology for the 90-nm lithography process is evaluated.

Figures in this Article
© 2009 Society of Photo-Optical Instrumentation Engineers

Topics

Lithography

Citation

Liang Zhu ; Yingchun Zhang ; Yili Gu ; Steve Yang and Xiaohui Kang
"Depth of focus enhancement for sub-110-nm technology by using KrF double-exposure lithography", J. Micro/Nanolith. MEMS MOEMS. 8(2), 023008 (June 18, 2009). ; http://dx.doi.org/10.1117/1.3155515


Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Proceedings Articles

Related Book Chapters

Topic Collections

PubMed Articles
Advertisement


 

  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.