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Stochastic modeling in lithography: use of dynamical scaling in photoresist development

[+] Author Affiliations
Chris A. Mack

Lithoguru.com, 1605 Watchhill Road, Austin, Texas 78703

J. Micro/Nanolith. MEMS MOEMS. 8(3), 033001 (July 02, 2009). doi:10.1117/1.3158612
History: Received March 11, 2009; Revised May 05, 2009; Accepted May 07, 2009; Published July 02, 2009
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The concepts of dynamical scaling in the study of kinetic roughness are applied to the problem of photoresist development. Uniform, open-frame exposure and development of photoresist corresponds to the problem of quenched noise and the etching of random disordered media and is expected to fall in the Kadar-Parisi-Zhang (KPZ) universality class. To verify this expectation, simulations of photoresist development in 1+1 dimensions were carried out with random, uncorrelated noise added to an otherwise uniform development rate. The resulting roughness exponent α and the growth exponent β were found to match the 1+1 KPZ values exactly.

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© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Chris A. Mack
"Stochastic modeling in lithography: use of dynamical scaling in photoresist development", J. Micro/Nanolith. MEMS MOEMS. 8(3), 033001 (July 02, 2009). ; http://dx.doi.org/10.1117/1.3158612


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