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Large-size P-type silicon microchannel plates prepared by photoelectrochemical etching

[+] Author Affiliations
Ding Yuan, Pengliang Ci, Fei Tian, Jing Shi, Shaohui Xu, Peisheng Xin, Lianwei Wang

East China Normal University, Key Laboratory of Polar Materials and Devices, Ministry of Education and Department of Electronic Engineering, Shanghai, 200241, China

Paul K. Chu

City University of Hong Kong, Department of Physics and Materials Sciences, Tat Chee Avenue, Kowloon, Hong Kong

J. Micro/Nanolith. MEMS MOEMS. 8(3), 033012 (July 01, 2009). doi:10.1117/1.3158616
History: Received October 24, 2008; Revised April 17, 2009; Accepted May 12, 2009; Published July 01, 2009
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The influence of backside illumination and temperature on the fabrication of large and high aspect ratio silicon microchannel plates (MCPs) by photoelectrochemical (PEC) process is described. Backside illumination is provided by three 150-W tungsten halogen lamps with a feedback loop, keeping a constant current density. The etching temperature is maintained by a circulation system. Proper backside illumination and the lower temperature can provide better integrated etching conditions compared to that without illumination and temperature control. Etching under the improved conditions results in smoother undercutting and better surface topography for large (effective diameter of about 80mm for 4-inch silicon substrates) silicon microchannel plates. Enhancing the backside illumination within the etching temperature range ensures that the aspect ratio is more than 40, boding well for applications of silicon microchannel plates.

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© 2009 Society of Photo-Optical Instrumentation Engineers

Citation

Ding Yuan ; Pengliang Ci ; Fei Tian ; Jing Shi ; Shaohui Xu, et al.
"Large-size P-type silicon microchannel plates prepared by photoelectrochemical etching", J. Micro/Nanolith. MEMS MOEMS. 8(3), 033012 (July 01, 2009). ; http://dx.doi.org/10.1117/1.3158616


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