Articles

Effect of residual stress on nanoindented property of Si∕C∕Si multilayers

[+] Author Affiliations
Bo-Hsiung Wu

National Cheng Kung University, Center for Micro/Nano Science and Technology, Tainan, Taiwan

Chen-Kuei Chung

National Cheng Kung University, Center for Micro/Nano Science and Technology and Department of Mechanical Engineering, Tainan, Taiwan

Ting-Ruen Shih, Cheng-Chang Peng

National Cheng Kung University, Department of Mechanical Engineering, Tainan, Taiwan

Udit-Surya Mohanty

Murdoch University, Department of Chemistry, Western Australia, 6150

J. Micro/Nanolith. MEMS MOEMS. 8(3), 033030 (July 14, 2009). doi:10.1117/1.3158358
History: Received August 13, 2008; Revised April 24, 2009; Accepted May 18, 2009; Published July 14, 2009
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The effect of residual stress on the nanoindentation property of SiCSi multilayers has been investigated. Sandwiched SiCSi multilayers were deposited on Si(100) substrates by means of ultrahigh-vacuum ion-beam sputtering at room temperature (RT). Four structures with different Si top-layer thickness of 5, 10, 25, and 50nm and the constant thickness of CSi underlayer at 10050nm were investigated in this study. The residual stress of the SiCSi (510050nmnmnm thick) film was about 17.76GPa under compression, and its hardness was 20.39GPa at RT. The compressive residual stress was decreased to 5.54GPa with the increased thickness of Si toplayer up to 50nm, and its hardness was reduced to 16.22GPa at RT. The effect of Si top-layer thickness (550nm) on SiCSi residual stress on the nanoindentation property were also discussed. The results showed that the thicker was the Si toplayer, the lower was the residual stress and hardness, which was good for the suppression of the buckling or wrinkling in the CSi-nanocomposite film.

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© 2009 Society of Photo-Optical Instrumentation Engineers

Topics

Multilayers

Citation

Bo-Hsiung Wu ; Chen-Kuei Chung ; Ting-Ruen Shih ; Cheng-Chang Peng and Udit-Surya Mohanty
"Effect of residual stress on nanoindented property of Si∕C∕Si multilayers", J. Micro/Nanolith. MEMS MOEMS. 8(3), 033030 (July 14, 2009). ; http://dx.doi.org/10.1117/1.3158358


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